A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).

A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).

An alloy having a formula Fe.sub.aCo.sub.bNi.sub.cCu.sub.dM.sub.eSi.sub.fB.sub.gX.sub.h is provided. M is at least one of V, Nb, Ta, Ti, Mo, W, Zr, Cr, Mn and Hf; a, b, c, d, e, f, g are in at. %; X denotes impurities and optional elements P, Ge and C; and a, b, c, d, e, f, g, h satisfy the following: 0b4, 0c<4, 0.5d2, 2.5e3.5, 14.5f16, 6g7, h<0.5, and 1(b+c)4.5, where a+b+c+d+e+f+g=100.
The alloy has a nanocrystalline microstructure, a saturation magnetostriction of |s|1 ppm, a hysteresis loop with a central linear part, and a permeability () of 10,000 to 15,000.

An alloy having a formula Fe.sub.aCo.sub.bNi.sub.cCu.sub.dM.sub.eSi.sub.fB.sub.gX.sub.h is provided. M is at least one of V, Nb, Ta, Ti, Mo, W, Zr, Cr, Mn and Hf; a, b, c, d, e, f, g are in at. %; X denotes impurities and optional elements P, Ge and C; and a, b, c, d, e, f, g, h satisfy the following: 0b4, 0c<4, 0.5d2, 2.5e3.5, 14.5f16, 6g7, h<0.5, and 1(b+c)4.5, where a+b+c+d+e+f+g=100.
The alloy has a nanocrystalline microstructure, a saturation magnetostriction of |s|1 ppm, a hysteresis loop with a central linear part, and a permeability () of 10,000 to 15,000.

A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a CoFeB layer. The dry etching includes removal of layers to the B absorption layer. An end of etching is set as an end point time detected by an analysis device when a final layer before the B absorption layer directly above the CoFeB layer is exposed has reduced to a prescribed level, or when the B absorption layer directly above the CoFeB layer has increased to the prescribed level. An amount of over-etching after the end point time is specified in advance, and the B absorption layer is stacked such that the thickness from the prescribed level to the upper surface of the CoFeB layer corresponds to the over-etching amount.

A method for producing a tunnel magnetoresistive element includes a stacking step, then in-magnetic field heating, and then dry etching. The stacking includes stacking a B absorption layer which is in contact with an upper surface of a CoFeB layer. The dry etching includes removal of layers to the B absorption layer. An end of etching is set as an end point time detected by an analysis device when a final layer before the B absorption layer directly above the CoFeB layer is exposed has reduced to a prescribed level, or when the B absorption layer directly above the CoFeB layer has increased to the prescribed level. An amount of over-etching after the end point time is specified in advance, and the B absorption layer is stacked such that the thickness from the prescribed level to the upper surface of the CoFeB layer corresponds to the over-etching amount.

A substrate processing device and a processing system process substrates each having a magnetic layer individually and are provided with: a support unit for supporting a substrate; a heating unit for heating the substrate supported on the support unit; a cooling unit for cooling the substrate supported on the support unit; a magnet unit for generating a magnetic field; and a processing chamber accommodating the support unit, the heating unit, and the cooling unit. The magnet unit includes a first and a second end surface which extend in parallel. The first and the second end surface are opposite to each other while being spaced apart from each other. The first end surface corresponds to a first magnetic pole of the magnet unit. The second end surface corresponds to a second magnetic pole of the magnet unit. The processing chamber is disposed between the first and the second end surface.

A method for synthesis of high anisotropy L1.sub.0 FeNi (tetrataenite) thin films is provided that combines physical vapor deposition via atomic layer sputtering and rapid thermal annealing with extreme heating and cooling speeds. The methods can induce L1.sub.0-ordering in FeNi thin films. The process uses a base composite film of a support substrate, a seed layer, a multilayer thin film of FeNi with alternating single atomic layers of Fe and Ni that mimics the atomic plane of the final L1.sub.0 FeNi alloy, and a capping layer. The Fe and Ni bilayers are grown on top of a Si substrate with a thermally oxidized SiO.sub.2 seed layer to mechanically strain the sample during rapid thermal annealing.

A method for synthesis of high anisotropy L1.sub.0 FeNi (tetrataenite) thin films is provided that combines physical vapor deposition via atomic layer sputtering and rapid thermal annealing with extreme heating and cooling speeds. The methods can induce L1.sub.0-ordering in FeNi thin films. The process uses a base composite film of a support substrate, a seed layer, a multilayer thin film of FeNi with alternating single atomic layers of Fe and Ni that mimics the atomic plane of the final L1.sub.0 FeNi alloy, and a capping layer. The Fe and Ni bilayers are grown on top of a Si substrate with a thermally oxidized SiO.sub.2 seed layer to mechanically strain the sample during rapid thermal annealing.

An EM structure to emit a low frequency oscillating electromagnetic energy field has a nonpolar substrate, carbon fiber and an epoxy mixture to adhere the carbon fiber to a substrate, such as Kydex. The polarity changes from nonpolar to polar upon application of direct heat When the EM structure is configured with two opposing sides that have the same flex modulus, the EM structure is reactive to external materials. The electromagnetic field changes the structure, or energy level, of the unprocessed material to a positive, reinforcing energy while processed foods remain in a negative, draining state.