A method for forming self aligned magnetic memory element pillars for Magnetic Random Access Memory. The method allows the magnetic memory element pillars to be arranged in staggered rows of memory elements at a pitch that is smaller than what is possible using photolithography alone. The method involves forming a spacer mask in the form of an array of connected rings arranged in a square pattern of non-staggered rows. A sacrificial mask material is deposited over the spacer mask and the spacer mask is then removed, leaving sacrificial mask material in the holes at the center of the rings and also in the spaces between the rings. A reactive ion processes is then performed to transfer the pattern of the sacrificial mask onto underlying hard mask layers. A material removal process can then be performed to define a plurality of memory element pillars.

A method for synthesis of high anisotropy L1.sub.0 FeNi (tetrataenite) thin films is provided that combines physical vapor deposition via atomic layer sputtering and rapid thermal annealing with extreme heating and cooling speeds. The methods can induce L1.sub.0-ordering in FeNi thin films. The process uses a base composite film of a support substrate, a seed layer, a multilayer thin film of FeNi with alternating single atomic layers of Fe and Ni that mimics the atomic plane of the final L1.sub.0 FeNi alloy, and a capping layer. The Fe and Ni bilayers are grown on top of a Si substrate with a thermally oxidized SiO.sub.2 seed layer to mechanically strain the sample during rapid thermal annealing.

A method for synthesis of high anisotropy L1.sub.0 FeNi (tetrataenite) thin films is provided that combines physical vapor deposition via atomic layer sputtering and rapid thermal annealing with extreme heating and cooling speeds. The methods can induce L1.sub.0-ordering in FeNi thin films. The process uses a base composite film of a support substrate, a seed layer, a multilayer thin film of FeNi with alternating single atomic layers of Fe and Ni that mimics the atomic plane of the final L1.sub.0 FeNi alloy, and a capping layer. The Fe and Ni bilayers are grown on top of a Si substrate with a thermally oxidized SiO.sub.2 seed layer to mechanically strain the sample during rapid thermal annealing.

An excellent low noise property and excellent low iron loss property are obtained. A grain-oriented electrical steel sheet includes refined magnetic domains formed by electron beam irradiation. When the maximum magnetic flux density is 1.7 T, the grain-oriented electrical steel sheet has a residual magnetic flux density of 0.1 to 0.7 times the residual magnetic flux density before the electron beam irradiation and a maximum magnetizing force of 1.1 to 2.0 times the maximum magnetizing force before the electron beam irradiation.

An excellent low noise property and excellent low iron loss property are obtained. A grain-oriented electrical steel sheet includes refined magnetic domains formed by electron beam irradiation. When the maximum magnetic flux density is 1.7 T, the grain-oriented electrical steel sheet has a residual magnetic flux density of 0.1 to 0.7 times the residual magnetic flux density before the electron beam irradiation and a maximum magnetizing force of 1.1 to 2.0 times the maximum magnetizing force before the electron beam irradiation.

A computer program product according to one embodiment includes a computer readable storage medium having program instructions embodied therewith. The program instructions area executable by a data processing system having at least one processor to cause the data processing system to apply, by the data processing system, a current to a lead of a tunneling magnetoresistance (TMR) sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintain, by the data processing system, the current at the level for an amount of time sufficient to anneal the sensor.

A computer program product according to one embodiment includes a computer readable storage medium having program instructions embodied therewith. The program instructions area executable by a data processing system having at least one processor to cause the data processing system to apply, by the data processing system, a current to a lead of a tunneling magnetoresistance (TMR) sensor for inducing joule heating of the lead or a heating layer, the level of joule heating being sufficient to anneal a magnetic layer of the sensor; and maintain, by the data processing system, the current at the level for an amount of time sufficient to anneal the sensor.

The present invention provides a method for improving coercive force of magnets, this method comprises steps as follows: S2) coating step: coating a coating material on the surface of a magnet and drying it; and S3) infiltrating step: heat treating the magnet obtained from the coating step S2). The coating material comprises (1) metal calcium particles and (2) particles of a material containing a rare earth element; the rare earth element is at least one selected from Praseodymium, Neodymium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Thulium, Ytterbium and Lutetium. The method of the present invention can significantly increase coercive force of a permanent magnet material, while remanence and magnetic energy product hardly decrease. In addition, the method of the present invention can significantly decrease the amount of a rare earth element, and accordingly, decrease the production cost.

The present invention provides a method for improving coercive force of magnets, this method comprises steps as follows: S2) coating step: coating a coating material on the surface of a magnet and drying it; and S3) infiltrating step: heat treating the magnet obtained from the coating step S2). The coating material comprises (1) metal calcium particles and (2) particles of a material containing a rare earth element; the rare earth element is at least one selected from Praseodymium, Neodymium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Thulium, Ytterbium and Lutetium. The method of the present invention can significantly increase coercive force of a permanent magnet material, while remanence and magnetic energy product hardly decrease. In addition, the method of the present invention can significantly decrease the amount of a rare earth element, and accordingly, decrease the production cost.

Integrated circuits (ICs) and method for forming IC devices are presented. In one embodiment, a method of forming a device with an integrated magnetic component using 3-dimensional (3-D) printing is disclosed. The method includes providing a substrate with a base dielectric layer, the base dielectric layer serves as a base for the integrated magnetic component. A first metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A magnetic core is formed on the substrate by spray coating magnet powder over the substrate and performing selective laser sintering on the magnet powder. A second metal layer is formed on the substrate by spray coating metal powder over the substrate and performing selective laser melting on the metal powder. A patterned dielectric layer separates the first and second metal layers and the magnetic core.