The present invention relates to a method for manufacturing a light extraction substrate for an organic light-emitting diode and, more specifically, to a method for manufacturing a light extraction substrate for an organic light-emitting diode, capable of increasing light extraction efficiency and structural stability of an organic light-emitting diode by improving the dispersibility of light scattering particles, distributed inside a matrix layer, and substrate adhesion. To this end, the present invention provides a method for manufacturing a light extraction substrate for an organic light-emitting diode, the method comprising: a first mixing step of mixing transparent magnetic nanoparticles with a volatile first solution; a second mixing step of mixing, with a second solution including nonmagnetic oxide particles, a mixed liquid formed through the first mixing step and light scattered particles; a coating step of coating a base substrate with a coating solution formed through the second mixing step; and a magnetic field application step of applying a magnetic field to the coating solution side on the lower part of the base substrate so as to magnetically align the transparent magnetic nanoparticles included inside the coating solution.

The present invention relates to a method for manufacturing a light extraction substrate for an organic light-emitting diode and, more specifically, to a method for manufacturing a light extraction substrate for an organic light-emitting diode, capable of increasing light extraction efficiency and structural stability of an organic light-emitting diode by improving the dispersibility of light scattering particles, distributed inside a matrix layer, and substrate adhesion. To this end, the present invention provides a method for manufacturing a light extraction substrate for an organic light-emitting diode, the method comprising: a first mixing step of mixing transparent magnetic nanoparticles with a volatile first solution; a second mixing step of mixing, with a second solution including nonmagnetic oxide particles, a mixed liquid formed through the first mixing step and light scattered particles; a coating step of coating a base substrate with a coating solution formed through the second mixing step; and a magnetic field application step of applying a magnetic field to the coating solution side on the lower part of the base substrate so as to magnetically align the transparent magnetic nanoparticles included inside the coating solution.

A magnetic element is disclosed wherein a composite seed layer such as TaN/Mg enhances perpendicular magnetic anisotropy (PMA) in an overlying magnetic layer that may be a reference layer, free layer, or dipole layer. The first seed layer is selected from one or more of Ta, Zr, Nb, TaN, ZrN, NbN, and Ru. The second seed layer is selected from one or more of Mg, Sr, Ti, Al, V, Hf, B, and Si. A growth promoting layer made of NiCr or an alloy thereof is inserted between the seed layer and magnetic layer. In some embodiments, a first composite seed layer/NiCr stack is formed below the reference layer, and a second composite seed layer/NiCr stack is formed between the free layer and a dipole layer. The magnetic element has thermal stability to at least 400° C.

A MEMS system includes a first permanent-magnetic microstructure and a second permanent-magnetic microstructure. The first permanent-magnetic microstructure is movable along a first direction. The second permanent-magnetic microstructure is arranged to be spaced apart from the first permanent-magnetic microstructure, wherein, by moving the first permanent-magnetic microstructure along the first direction, the second permanent-magnetic microstructure or one or more elements of the second permanent-magnetic microstructure are either moved or actuated in a second direction or undergo rotation.

A MEMS system includes a first permanent-magnetic microstructure and a second permanent-magnetic microstructure. The first permanent-magnetic microstructure is movable along a first direction. The second permanent-magnetic microstructure is arranged to be spaced apart from the first permanent-magnetic microstructure, wherein, by moving the first permanent-magnetic microstructure along the first direction, the second permanent-magnetic microstructure or one or more elements of the second permanent-magnetic microstructure are either moved or actuated in a second direction or undergo rotation.

Embodiments may provide a realization of strong Dzyaloshinskii-Moriya interaction (DMI) and perpendicular magnetic anisotropy (PMA) induced by chemisorbed species on a ferromagnetic layer. For example, in an embodiment, an apparatus for generating DMI may comprise a ferromagnet comprising a single-layer or multi-layers of materials made of metal, oxide or other types of magnetic films, and a substance chemisorbed on a surface of the ferromagnet to induce the DMI or the PMA at the interface between the chemisorbed species and the ferromagnet. These induced effects may be used to maniupulate spin textures such as switching of domain wall chirality and writing/deleting of magnetic skyrmions, which are relevant for spintronics and magneto-ionics as well as for gas sensing.

A magnetoresistive element comprises a novel iPMA cap layer on a surface of a recording layer to induce a giant interfacial perpendicular magnetic anisotropy (G-iPMA) of the recording layer and a method of making the same. The recording layer comprises a first free layer immediately contacting to the tunnel barrier layer and having a body-centered cubic structure with a (100) texture, and a second free layer having a body-centered cubic structure with a (110) texture or a face-centered cubic structure with a (111) texture, and a crystal-breaking layer inserted between the first free layer and the second free layer.

The disclosure provides a magnetic random access memory element. The magnetic random access memory element includes a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer between the magnetic free layer and the magnetic reference layer. The magnetic random access memory element further includes a MgO layer contacting the magnetic free layer. The MgO layer includes multiple homogeneous layers of MgO that provide excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.

A product includes an array of cold spray-formed structures. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material. A product includes a cold spray-formed structure characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material.

The present disclosure includes a thin film assembly comprising a substrate and an epitaxial crystalline thin film disposed on the substrate, wherein the epitaxial crystalline thin film is a single crystal, wherein at least a portion of the epitaxial crystalline thin film is doped with rare-earth ions at a concentration of less than 100 parts per billion. The disclosure further includes a method of manufacturing a thin film assembly, the method comprising creating, on a substrate and with use of molecular beam epitaxy, an epitaxial crystalline thin film doped with the rare-earth ions at a concentration of less than 100 parts per billion.