The present disclosure discloses a fixing apparatus for fixing a substrate to be processed below a bearing base during an evaporation process, the substrate to be processed includes a base substrate, a ferromagnetic material is formed on a front surface or a back surface of the base substrate, and a magnetic field generator is disposed on a back surface of the bearing base at a location corresponding to the ferromagnetic material; the magnetic field generator is configured to generate a magnetic field so that the ferromagnetic material and the magnetic field generator are approaching to each other under an effect of the magnetic field generated by the magnetic field generator to fix a front surface of the bearing base with the back surface of the base substrate. An evaporation method is further disclosed.

A magnetic light-emitting structure and fabrication method for manufacturing a magnetic light-emitting element are provided. The fabrication method comprises providing a magnetic metal composite substrate, wherein a second metal layer is respectively disposed on an upper and lower surface of a first metal layer; forming a connecting metal layer, an epitaxial layer and a plurality of electrode unit on top; and performing a complex process, which removes the second metal layer on the lower surface of the first metal layer and part of the first metal layer and performs cutting according to the number of the electrode unit, so as to form a plurality of epitaxial die. Each epitaxial die corresponds to an electrode unit to form a magnetic light-emitting element. The proposed method improves soft magnetic properties of an original substrate and enables dies to reverse spontaneously, thereby used perfectly for industrial mass transfer technology.

Each memory cell in an array includes a vertical stack that comprises a bottom electrode, a memory element, and a top electrode. An etch stop dielectric layer is formed over the array of memory cells. A first dielectric matrix layer is formed over the etch stop dielectric layer. The top surface of the first dielectric matrix layer is raised in a memory array region relative to a logic region due to topography. The first dielectric matrix layer is planarized by performing a chemical mechanical planarization process using top portions of the etch stop dielectric layer. A second dielectric matrix layer is formed over the first dielectric matrix layer. Metallic cell contact structures are formed through the second dielectric matrix layer on a respective subset of the top electrodes over vertically protruding portions of the etch stop dielectric layer that laterally surround the array of vertical stacks.

Each memory cell in an array includes a vertical stack that comprises a bottom electrode, a memory element, and a top electrode. An etch stop dielectric layer is formed over the array of memory cells. A first dielectric matrix layer is formed over the etch stop dielectric layer. The top surface of the first dielectric matrix layer is raised in a memory array region relative to a logic region due to topography. The first dielectric matrix layer is planarized by performing a chemical mechanical planarization process using top portions of the etch stop dielectric layer. A second dielectric matrix layer is formed over the first dielectric matrix layer. Metallic cell contact structures are formed through the second dielectric matrix layer on a respective subset of the top electrodes over vertically protruding portions of the etch stop dielectric layer that laterally surround the array of vertical stacks.

The present disclosure provides a semiconductor structure. The semiconductor structure includes an N.sup.th metal layer in a memory region and a periphery region, the periphery region spanning a wider area than the memory region, a plurality of magnetic tunneling junctions (MTJs) over the N.sup.th metal layer, the plurality of MTJs having at least one of mixed pitches and mixed sizes, a top electrode via over each of the plurality of MTJs, and an (N+M).sup.th metal layer over the plurality of MTJs. A method for manufacturing the semiconductor structure is also disclosed.

The present disclosure provides a semiconductor structure. The semiconductor structure includes an N.sup.th metal layer in a memory region and a periphery region, the periphery region spanning a wider area than the memory region, a plurality of magnetic tunneling junctions (MTJs) over the N.sup.th metal layer, the plurality of MTJs having at least one of mixed pitches and mixed sizes, a top electrode via over each of the plurality of MTJs, and an (N+M).sup.th metal layer over the plurality of MTJs. A method for manufacturing the semiconductor structure is also disclosed.

A method for fabricating semiconductor device includes the steps of: providing a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, forming a magnetic tunneling junction (MTJ) on the MRAM region, forming a metal interconnection on the MTJ, forming a dielectric layer on the metal interconnection, patterning the dielectric layer to form openings, and forming the blocking layer on the patterned dielectric layer and the metal interconnection and into the openings.

A method for fabricating semiconductor device includes the steps of: providing a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, forming a magnetic tunneling junction (MTJ) on the MRAM region, forming a metal interconnection on the MTJ, forming a dielectric layer on the metal interconnection, patterning the dielectric layer to form openings, and forming the blocking layer on the patterned dielectric layer and the metal interconnection and into the openings.

A coil electronic component includes a magnetic body, wherein the magnetic body includes a substrate, and a coil part including patterned insulating films disposed on the substrate, a first plating layer formed between the patterned insulating films by plating, and a second plating layer disposed on the first plating layer.

A coil electronic component includes a magnetic body, wherein the magnetic body includes a substrate, and a coil part including patterned insulating films disposed on the substrate, a first plating layer formed between the patterned insulating films by plating, and a second plating layer disposed on the first plating layer.