A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.

A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.

A carrier system (100) provides a carrier or carriers (12) for carrying assay samples in an assay. The carrier(s) are secured to a substrate (10) by a release layer (14). The carrier(s) are suitable for receiving an assay sample, and the release layer is configured to release the carrier(s) from the substrate in the presence of a biocompatible aqueous solution. To perform an assay a biocompatible aqueous solution, in which the assay sample is usually suspended, is supplied to the carrier system. The assay sample is received by the carrier(s) and the release layer is activated by the biocompatible aqueous solution to release the carrier.

A product includes an array of cold spray-formed structures. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material. A product includes a cold spray-formed structure characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material.

An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device.

An inductive device includes an insulating layer, a lower magnetic layer, and an upper magnetic layer that are formed such that the insulating layer does not separate the lower magnetic layer and the upper magnetic layer at the outer edges or wings of the inductive device. The lower magnetic layer and the upper magnetic layer form a continuous magnetic layer around the insulating layer and the conductors of the inductive device. Magnetic leakage paths are provided by forming openings through the upper magnetic layer. The openings may be formed through the upper magnetic layer by semiconductor processes that have relatively higher precision and accuracy compared to semiconductor processes for forming the insulating layer such as spin coating. This reduces magnetic leakage path variation within the inductive device and from inductive device to inductive device.

An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode, and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure, and a first dielectric layer surrounding the spacers. The MRAM device further includes a patterned etch stop layer on the first dielectric layer and the spacers. In addition, the MRAM device includes a second dielectric layer on the patterned etch stop layer, and a top electrode via embedded in the second dielectric layer and in contact with the top electrode and the patterned etch stop layer.

An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode, and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of the top electrode and the MTJ structure, and a first dielectric layer surrounding the spacers. The MRAM device further includes a patterned etch stop layer on the first dielectric layer and the spacers. In addition, the MRAM device includes a second dielectric layer on the patterned etch stop layer, and a top electrode via embedded in the second dielectric layer and in contact with the top electrode and the patterned etch stop layer.

A two-dimensional optical scanning mirror device, a manufacturing method for the same, a two-dimensional optical scanning device and an image projector. A two-dimensional optical scanning mirror device includes a substrate, a movable mirror portion supported on the substrate in such a manner that two-dimension optical scanning is possible, a hard magnetic thin film provided in the movable mirror portion and a magnetic field generator that includes at least an alternating magnetic field generator for driving the movable mirror portion, where the hard magnetic thin film has a magnetization direction in a direction of a film plane, and the ratio of the magnetic field generated by the magnetic field generator relative to the coercive force of the hard magnetic thin film is 0.2 or lower.

A method for forming a magnetic memory device is disclosed. At least one magnetic tunneling junction (MTJ) stack is formed on the substrate. The MTJ stack comprises a reference layer, a tunnel barrier layer and a free layer. A top electrode layer is formed on the MTJ stack. A patterned sacrificial layer is formed on the top electrode layer. The MTJ stack is then subjected to a MTJ patterning process in a high-density plasma chemical vapor deposition (HDPCVD) chamber, thereby sputtering off the MTJ stack not covered by the patterned sacrificial layer. During the MTJ patterning process, sidewalls of layers or sub-layers of the MTJ stack are simultaneously passivated in the HDPCVD chamber by depositing a sidewall protection layer.