A variable capacitor, including: two movable plates, two poles, and one rotary shaft. The two movable plates are conductor belts, and the conductor belts are sheathed in insulators. The two poles are conductors, and each is capable of rotating around an axis thereof. First ends of the two movable plates are connected via the insulators and fixed on the rotary shaft, and second ends of the two movable plates are connected to the two poles, respectively. A conductor member of the two movable plates directly contacts the two poles. The lengths of the two movable plates are identical, and are greater than the distance from one pole to the rotary shaft.

A variable capacitor, including: two movable plates, two poles, and one rotary shaft. The two movable plates are conductor belts, and the conductor belts are sheathed in insulators. The two poles are conductors, and each is capable of rotating around an axis thereof. First ends of the two movable plates are connected via the insulators and fixed on the rotary shaft, and second ends of the two movable plates are connected to the two poles, respectively. A conductor member of the two movable plates directly contacts the two poles. The lengths of the two movable plates are identical, and are greater than the distance from one pole to the rotary shaft.

A variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer overlying a substrate, a second main capacitor electrode spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode. The movable capacitor electrode can be caused to be in a first position ohmically electrically connected to the fixed main capacitor electrode such that the variable capacitor has a first capacitance value or in a second position spaced from the fixed main capacitor electrode such that the variable capacitor has a second capacitance value.

A variable capacitor includes a fixed main capacitor electrode disposed in a first metal layer overlying a substrate, a second main capacitor electrode spaced from the fixed main capacitor electrode, and a movable capacitor electrode disposed in the first metal layer adjacent the fixed main capacitor electrode. The movable capacitor electrode can be caused to be in a first position ohmically electrically connected to the fixed main capacitor electrode such that the variable capacitor has a first capacitance value or in a second position spaced from the fixed main capacitor electrode such that the variable capacitor has a second capacitance value.

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

A multilayer electronic component includes an element body having an internal electrode layer and a dielectric layer. These are substantially parallel to a plane including a first axis and a second axis and are alternately laminated along a third axis direction. Side surfaces facing each other in the first axis direction are respectively equipped with an insulating layer. End surfaces facing each other in the second axis direction are respectively equipped with an external electrode. The insulating layer integrally has an insulating layer extension portion covering part of the end surfaces facing each other in the second axis direction. W1/W0 is 1/30 to less than , where W0 denotes a width along the first axis, and W1 denotes a width along the first axis of the insulating layer extension portion. The external electrode covers at least part of the insulating layer extension portion.

A multilayer electronic component includes an element body having internal electrode layers and dielectric layers. These are substantially parallel to a plane including a first axis and a second axis and are alternately laminated along a third axis direction. Side surfaces oppositely facing in the first axis direction are respectively equipped with an insulating layer. End surfaces facing each other in the second axis direction are respectively equipped with an external electrode. End portions in the first axis direction of the internal electrode layers are recessed from end portions in the first axis direction of the dielectric layers to an inner side along the first axis direction. The retraction distances are varied at a predetermined range in each layer of the internal electrode layers.

A multilayer electronic component includes an element body having internal electrode layers and dielectric layers. These are substantially parallel to a plane including a first axis and a second axis and are alternately laminated along a third axis direction. Side surfaces oppositely facing in the first axis direction are respectively equipped with an insulating layer. End surfaces facing each other in the second axis direction are respectively equipped with an external electrode. End portions in the first axis direction of the internal electrode layers are recessed from end portions in the first axis direction of the dielectric layers to an inner side along the first axis direction. The retraction distances are varied at a predetermined range in each layer of the internal electrode layers.

According to one embodiment, an electronic device includes a first element provided on a semiconductor substrate and used for actual operation, and a second element unit constituted by at least one second element for evaluation provided on the semiconductor substrate, wherein the first element includes a first plate-like portion and a first thin-film portion covering the first plate-like portion and forming a cavity therein, and the second element unit includes a plurality of second plate-like portions having different lengths, and at least one second thin-film portion covering the second plate-like portions and forming a cavity therein.