Patent classifications
H01G5/18
MEMS tunable capacitor comprising amplified piezo actuator and a method for making the same
A micromachined tunable capacitor. A pair of first and second MEMS fabricated flexures are flexibly coupled to a piezo actuator drive element configured wherein a stress or strain induced by the piezo actuator drive element urges a first movable capacitor plate element a predetermined distance toward or away from a second capacitor plate element proportional to a predetermined voltage signal.
Controllable integrated capacitive device
An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.
Controllable integrated capacitive device
An integrated circuit includes several metallization levels separated by an insulating region. A hollow housing whose walls comprise metallic portions is produced within various metallization levels. A controllable capacitive device includes a suspended metallic structure situated in the hollow housing within a first metallization level including a first element fixed on two fixing zones of the housing and at least one second element extending in cantilever fashion from the first element and includes a first electrode of the capacitive device. A second electrode includes a first fixed body situated at a second metallization level adjacent to the first metallization level facing the first electrode. The first element is controllable in flexion from a control zone of this first element so as to modify the distance between the two electrodes.
Plate capacitor having a plate made of an elastic material
A plate capacitor having a first capacitor plate which is arranged at a distance from a second capacitor plate. The first capacitor plate is produced from an elastic material and has a curved shape in the unloaded state. The first capacitor plate is held by a holder. The elastic material to be is electrically conductive or is provided with an electrically conductive layer. An electrically insulating layer is arranged between the first and the second capacitor plate.
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE THEREOF
A method for manufacturing a semiconductor structure is provided. The method may include several operations. A piezoelectric capacitor is formed over a substrate, wherein the piezoelectric capacitor includes a metal electrode. An intermediate layer is formed on the metal electrode, and is patterned using a first mask layer as a mask. A metal layer is formed on the intermediate layer, wherein the metal layer electrically connects to the metal electrode. The metal layer is patterned using a second mask layer, wherein the intermediate layer is within a coverage area of the metal layer from a top-view perspective after the patterning of the metal layer. A semiconductor structure thereof is also provided.
METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE THEREOF
A method for manufacturing a semiconductor structure is provided. The method may include several operations. A piezoelectric capacitor is formed over a substrate, wherein the piezoelectric capacitor includes a metal electrode. An intermediate layer is formed on the metal electrode, and is patterned using a first mask layer as a mask. A metal layer is formed on the intermediate layer, wherein the metal layer electrically connects to the metal electrode. The metal layer is patterned using a second mask layer, wherein the intermediate layer is within a coverage area of the metal layer from a top-view perspective after the patterning of the metal layer. A semiconductor structure thereof is also provided.
VARIABLE CAPACITOR WITH LINEAR IMPEDANCE AND HIGH VOLTAGE BREAKDOWN
A variable capacitor includes an enclosure having first and second conductive collars separated by an intermediate electrically insulating element. A movable capacitor plate assembly is electrically coupled to the first conductive collar, and a fixed capacitor plate assembly is electrically coupled to the second conductive collar. An actuator extends into the enclosure for advancing and retracting the movable capacitor plate assembly relative to the fixed capacitor plate assembly. A hermetically sealed volume within the enclosure maintains a vacuum or a liquid serving as a dielectric between a capacitor plate of the movable capacitor plate assembly and a capacitor plate of the fixed capacitor plate assembly. At least one capacitor plate comprises a coiled cylindrical plate having a having a greater height at a center portion of the capacitor plate coil and a lower height at an outer portion of the capacitor plate coil.
VARIABLE CAPACITOR WITH LINEAR IMPEDANCE AND HIGH VOLTAGE BREAKDOWN
A variable capacitor includes an enclosure having first and second conductive collars separated by an intermediate electrically insulating element. A movable capacitor plate assembly is electrically coupled to the first conductive collar, and a fixed capacitor plate assembly is electrically coupled to the second conductive collar. An actuator extends into the enclosure for advancing and retracting the movable capacitor plate assembly relative to the fixed capacitor plate assembly. A hermetically sealed volume within the enclosure maintains a vacuum or a liquid serving as a dielectric between a capacitor plate of the movable capacitor plate assembly and a capacitor plate of the fixed capacitor plate assembly. At least one capacitor plate comprises a coiled cylindrical plate having a having a greater height at a center portion of the capacitor plate coil and a lower height at an outer portion of the capacitor plate coil.
Laterally actuated amplified capacitive vapor sensor
A capacitive vapor sensor, sensor system, and method for determining a vapor concentration is provided. The capacitive sensor includes a first electrode and a second electrode. The first and second electrodes are configured to provide a bias voltage. The sensor further includes a cantilevered sensor electrode interdigitated between the first and second electrodes and having an adsorptive polymer attached to a surface of the cantilevered sensor electrode. The adsorptive polymer is configured to expand in response to adsorbing a vapor and cause a deflection of the cantilevered sensor electrode, the deflection causing a change in a differential capacitance of the first and second electrodes. A sensor indicates current at the cantilevered sensor electrode, and an electronic processor determines the change in the differential capacitance to determine a characteristic or concentration of the vapor.
Laterally actuated amplified capacitive vapor sensor
A capacitive vapor sensor, sensor system, and method for determining a vapor concentration is provided. The capacitive sensor includes a first electrode and a second electrode. The first and second electrodes are configured to provide a bias voltage. The sensor further includes a cantilevered sensor electrode interdigitated between the first and second electrodes and having an adsorptive polymer attached to a surface of the cantilevered sensor electrode. The adsorptive polymer is configured to expand in response to adsorbing a vapor and cause a deflection of the cantilevered sensor electrode, the deflection causing a change in a differential capacitance of the first and second electrodes. A sensor indicates current at the cantilevered sensor electrode, and an electronic processor determines the change in the differential capacitance to determine a characteristic or concentration of the vapor.