The present disclosure is a photoelectric conversion element including: a photoelectric conversion layer 5 including a first quantum dot 4a and a second quantum dot 4b, a ratio X of the number of heavy metal atoms to the number of oxygen group atoms is less than 2 on a surface of the nanoparticle of the first quantum dot 4a, the ratio X is greater than or equal to 2 on a surface of the nanoparticle of the second quantum dot 4b, and Equation (1) is satisfied:
0.3<N  (1),
where N denotes a ratio of the number of second quantum dots to the number of first quantum dots.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1 + n2 + n3 may equal 1.

A method of manufacturing a transparent conductive film comprising preparing a substrate; and forming a thin film comprising—a compound of Chemical Formula 1 on the substrate:
Ba.sub.pLa.sub.qSn.sub.mO.sub.n  Formula 1
wherein p, q, m and n are atomic content ratios, p, m and n each are independently more than 0 and less than or equal to 6, and q is 0 or 1, wherein the forming of the thin film is performed by an RF sputtering process at a temperature of 250° C. or lower.

Disclosed herein is the formation of p-type transparent conducting oxides (TCO) having a structure of Mg.sub.xNi.sub.1-xO or Zn.sub.xNi.sub.1-xO. These structures disrupt the two-dimensional confinement of individual holes (the dominant charge carrier transport mechanism in pure NiO) creating three-dimensional hole transport by providing pathways for hole transfer in directions that are unfavorable in pure NiO. Forming these structures preserves NiO's transparency to visible light since the band gaps do not deviate significantly from that of pure NiO. Furthermore, forming Mg.sub.xNi.sub.1-xO or Zn.sub.xNi.sub.1-xO does not lead to hole trapping on O ions adjacent to Zn and Mg ions. The formation of these alloys will lead to creation of three-dimensional hole transport and improve NiO's conductivity for use as p-type TCO, without adversely affecting the favorable properties of pure NiO.

A flexible dye-sensitized solar cell includes: a fiber layer formed of nanofibers; a conductive electrode layer formed on one side of the fiber layer; a photoelectrode layer formed on the conductive electrode layer; a counter electrode layer formed on the other side of the fiber layer; a sealing member for enclosing the fiber layer, the conductive electrode layer, the counter electrode layer and the photoelectrode layer therein so as to seal said layers from the outside; and an electrolyte infiltrated into the fiber layer. A cell body in which an electrode and a photoelectrode are formed on one surface of the fiber that contains an electrolyte therein and a counter electrode is formed on the other side of the fiber is sealed with a polymer film, thus forming a flexible solar cell having an excellent sealing structure for preventing the electrolyte from leaking out of the cell even when pressure is externally applied.

A method for manufacturing a perovskite solar cell, includes disposing an electron transport layer on a transparent conductive substrate, disposing an additive-doped perovskite light absorption layer on the electron transport layer, disposing a hole transport layer on the additive-doped perovskite light absorption layer, and disposing an electrode on the hole transport layer. The disposing of the additive-doped perovskite light absorption layer includes adding an additive having hydrophobicity to a perovskite precursor solution, and applying the additive-added perovskite precursor solution onto the electron transport layer to form the additive-doped perovskite light absorption layer.

An oxide layer (2) of tin or niobium is formed on one surface of a carbon nanotube-containing layer (1) containing carbon nanotubes having an average diameter (Av) and a diameter standard deviation (σ) that satisfy a relationship 0.60>3σ/Av>0.20.

A dye-sensitized solar cell having a porous conductive powder layer, which layer is formed by deposition of a deposit comprising metal hydride particles onto a substrate; heating the deposit in a subsequent heating step in order to decompose the metal hydride particles to metal particles; and sinter said metal particles for forming a porous conductive powder layer.

Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode facing the first electrode, in which the light absorber includes a compound having a perovskite-type crystal structure including organic cations, cations of a metallic atom other than elements belonging to Group I of the periodic table, and anions, and at least some of the organic cations constituting the compound are organic cations having a silyl group and a solar cell using the photoelectric conversion element.

Also provided is a composition containing a compound represented by Formula (1a) and a halogenated metal.

R.sup.1.sub.3Si-L-NR.sup.2.sub.3Hal  Formula (1a)

In the formula, R.sup.1, R.sup.2, and L are specific groups. Hal represents a halogen atom.