The present disclosure provides a fuel production method and a fuel production apparatus which efficiently convert solar light energy into a fuel. The fuel production apparatus of the present disclosure includes a laminate, an electrolytic bath, and a support tool or a proton permeable membrane. The laminate includes a photoelectromotive layer having a p-n junction structure, a cathode electrode, an anode electrode and a side surface insulating layer, and the photoelectromotive layer includes a semiconductor layer that absorbs light in a near-infrared region with a wavelength of 900 nm or more. In the fuel production apparatus, an underwater optical path length is set to an optimum design value, so that even light in a near-infrared region with a wavelength of 900 nm or more is sufficiently utilized to efficiently convert light energy into at least one fuel selected from hydrogen, carbon monoxide, formic acid, methane, ethylene, methanol, ethanol, isopropanol, allyl alcohol, acetaldehyde and propionaldehyde through a reduction reaction on the cathode electrode.

The present invention relates to a photocatalyst using a semiconductor-carbon nanomaterial core-shell composite quantum dot and a method for preparing the same, more particularly to a microparticle in which a semiconductor-carbon nanomaterial core-shell composite quantum dot is self-assembled using 4-aminophenol, capable of improving photoelectrochemical response and photoconversion efficiency when used as a photocatalyst or a photoelectrode of a photoelectrochemical device, a photoelectrochemical device using the same and a method for preparing the same.

Forming a semiconductor device includes forming a first conductive line on a substrate, forming a memory cell including a switching device and a data storage element on the first conductive line, and forming a second conductive line on the memory cell. Forming the switching device includes forming a first semiconductor layer, forming a first doped region by injecting a n-type impurity into the first semiconductor layer, forming a second semiconductor layer thicker than the first semiconductor layer, on the first semiconductor layer having the first doped region, forming a second doped region by injecting a p-type impurity into an upper region of the second semiconductor layer, and forming a P-N diode by performing a heat treatment process to diffuse the n-type impurity and the p-type impurity in the first doped region and the second doped region to form a P-N junction of the P-N diode in the second semiconductor layer.

A electrochemical reaction device of an embodiment includes: an electrolytic tank storing an electrolytic solution containing water; a fine bubble supply part which supplies fine bubbles containing carbon dioxide into the electrolytic solution; a reduction electrode which is immersed in the electrolytic solution and reduces the carbon dioxide to generate a carbon compound; an oxidation electrode which is immersed in the electrolytic solution and oxidizes the water to generate oxygen; and a photoelectric conversion body electrically connected to the reduction electrode and the oxidation electrode. The fine bubbles have a floating velocity of 10 mm/s or less in the electrolytic solution under an atmospheric pressure and 20° C. condition.

Provided is a structure for forming carbon nanofiber, including a base material containing an oxygen ion-conductive oxide, and a metal catalyst that is provided on one surface side of the base material.

The present invention provides: a film that comprises single-layer carbon nanotubes having shapes which enable the characteristics thereof to be sufficiently exhibited; and a process for producing the film. The film, which comprises single-layer carbon nanotubes, has portions where single-layer carbon nanotubes are densely present and portions where single-layer carbon nanotubes are sparsely present, the dense portions forming a pseudo-honeycomb structure in a surface of the film.

A method of growing a III-V semiconductor compound film for a semiconductor device including the steps of depositing a textured oxide buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being a component of a III-V compound and forming a layer on the inorganic film on which additional elements from the III-V compound are added, forming a top layer of a tandem solar cell.

An electrochemical reaction device includes: an electrolytic solution tank including a first storage part storing a first electrolytic solution and a second storage part storing a second electrolytic solution; a reduction electrode immersed in the first electrolytic solution; and an oxidation electrode immersed in the second electrolytic solution. The second electrolytic solution contains a substance to be oxidized. The first electrolytic solution has a first liquid phase containing water and a second liquid phase containing an organic solvent and being in contact with the first liquid phase. At least one liquid phase of the first liquid phase or the second liquid phase contains a substance to be reduced and is in contact with the reduction electrode.

Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

The present invention relates to a photovoltaic device (10) comprising: a first conducting layer (16), a second conducting layer electrically insulated from the first conducting layer, a porous substrate (20) made of an insulating material arranged between the first and second conducting layers, a light absorbing layer (1) comprising a plurality of grains (2) of a doped semiconducting material disposed on the first conducting layer (16) so that the grains are in electrical and physical contact with the first conducting layer, and a charge conductor (3) made of a charge conducting material partly covering the grains and arranged to penetrate through the first conducting layer (16) and the porous substrate such that a plurality of continuous paths (22) of charge conducting material is formed from the surface of the grains (2) to the second conducting layer (18), wherein the first conducting layer (16) comprises a conducting material, an oxide layer (28) formed on the surface of conducting material, and an insulating coating (29) made of an insulating material deposited on the oxide layer (28) so that the oxide layer and the insulating coating together electrically insulate said paths (22) from the conducting material of the first conducting layer (16).