A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a bismuth halide precursor ink. Preparing a bismuth halide precursor ink comprises the steps of introducing a bismuth halide into a vessel; introducing a first solvent to the vessel; and contacting the bismuth halide with the first solvent to dissolve the bismuth halide to form the bismuth halide precursor ink; depositing the bismuth halide precursor ink onto a substrate; drying the bismuth halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region includes a first Sn concentration and a first Pb concentration. The second partial region includes at least one of a second Sn concentration or a second Pb concentration. The second Sn concentration is less than the first Sn concentration. The second Pb concentration is greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

The present invention relates to a method for manufacturing a photovoltaic device comprising: forming a porous first conducting layer on one side of a porous insulating substrate, coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, performing a first heat treatment of the structure to bond the grains to the first conducting layer, forming electrically insulating layers on surfaces of the first conducting layer, forming a second conducting layer on an opposite side of the porous insulating substrate, applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and electrically connecting the charge conducting material to the second conducting layer.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.