A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.

A photoelectric conversion element includes a first substrate, a second substrate, a first conductive layer, a photoelectric conversion layer, a porous insulating layer, a second conductive layer, a sealing member, and an electrolyte. The photoelectric conversion layer includes a porous semiconductor layer and a photosensitizer added to the porous semiconductor layer. The first conductive layer is divided by a groove into a first region where the photoelectric conversion layer is arranged, and a second region where the photoelectric conversion layer is not arranged. An insulating portion is arranged in and above the groove in a covering relation to a surface of the first region in part thereof where the photoelectric conversion layer is not arranged. The insulating portion has a denser structure than the porous insulating layer. When the photoelectric conversion layer and the insulating portion are projected onto a plane parallel to the first substrate from the side including the second substrate, a projection image of the insulating portion partly overlaps a projection image of the photoelectric conversion layer.

The present invention teaches increasing the efficiency of a dye-sensitive solar cell by increasing the surface area of the DSSC photoanode. A thin film titanium oxide is deposited in trapezoidal shaped wells etched in the DSSC substrate. The thin-film titanium oxide is anodized to produce titanium oxide nanotubes on the inner surface of the trapezoidal shaped wells to further increase the surface area and incidence of light being temporarily trapped within the wells. A sensitized dye overlays the titanium oxide nanotubes to increase quantity of light absorbed by the titanium oxide nanotubes. A photoactive layer such as Cs.sub.2O may be deposited to enhance electron current contribution. A compatible transparent metal contact layer is deposited. This layer may be followed by a high-refractive index droplet over the well to act as a convex lens waveguide for incoming light. Electrical connections are then made to the frontside and backside metal contacts.

There are provided a photoelectric conversion element and a photoelectric conversion element module including the photoelectric conversion element, the photoelectric conversion element including a transparent substrate, a transparent conductive layer arranged on the transparent substrate, a photoelectric conversion layer arranged on the transparent conductive layer, a porous insulating layer arranged in contact with the photoelectric conversion layer, a reflective layer arranged in contact with the porous insulating layer, and a catalyst layer and a counter conductive layer that are arranged on the reflective layer, in which the photoelectric conversion layer contains a porous semiconductor, a carrier-transport material, and a photosensitizer, and in which the area of the orthogonal projection of the porous insulating layer onto the transparent substrate and the area of the orthogonal projection of the reflective layer onto the transparent substrate are each larger than the area of the orthogonal projection of the photoelectric conversion layer onto the transparent substrate.

A dye-sensitized solar cell (DSC) element includes at least one DSC. The DSC includes a first base material having a transparent substrate, a second base material facing the first base material, an oxide semiconductor layer provided between the first and second base materials, and a sealing portion connecting the first and second base materials. One transparent substrate is provided for the at least one DSC, and a coating layer covering a light receiving surface, which is opposite to the second base material, of the transparent substrate and transmitting light is provided on the first base material. The coating layer includes an annular peripheral portion, and a center portion provided at the inner side of the peripheral portion. An average thickness of the peripheral portion is smaller than a maximum thickness of the center portion, and the coating layer has a refractive index higher than that of the transparent substrate.

An method for manufacturing a electronic device is provided having a current collector capable of a high specific charge collecting area and power, but is also achieved using a simple and fast technique and resulting in a robust design that may be flexed and can be manufactured in large scale processing.

To this end the electronic device comprising an electronic circuit equipped with a current collector formed by a metal substrate having a face forming a high-aspect ratio structure of pillars having an interdistance larger than 600 nm. By forming the high-aspect structure in a metal substrate, new structures can be formed that are conformal to curvature of a macroform or that can be coiled or wound and have a robust design.

The invention described herein are photovoltaic systems which are optimized to capture direct diffused sunlight.

A dye-sensitized solar cell is provided. The solar cell includes a transparent substrate; a conductive transparent electrode formed on a surface of the transparent substrate; a metal oxide particle electrode layer in which a photosensitive dye capable of absorbing light is adsorbed; a counter electrode, and an electrolyte injected between the metal oxide particle electrode layer and the counter electrode. The metal oxide particle electrode layer comprises a first electrode layer comprising metal oxide particles and having a predetermined pattern formed thereon and a second electrode layer comprising metal oxide particles and formed on the first electrode layer. Refractive indexes of the first and second electrode layers are different from each other.

A three-tandem (3T) perovskite/silicon (PVT)-based tandem solar cell (TSC) includes an antireflection coating (ARC), a first transparent conductive oxide layer (TCO), a hole transport layer (HTL), a perovskite (PVT) layer, a second transparent conductive oxide layer (TCO), an electron transport layer (ETL), a plurality of buried contacts, a p-type Si layer, a p-type wafer-based homo-junction silicon solar cell, a n.sup.+ silicon layer, a back contact layer. The solar cell further includes a top sub-cell, a bottom sub-cell and a middle contact-based tandem. The top sub-cell includes the PVT layer. The bottom sub-cell includes the silicon solar cell. The middle contact-based tandem includes the second TCO layer to be used as the middle contact-based tandem, as well as a recombination layer for current collection. Further, a conduction and a valence band edge are employed at a front surface of the ETL.