An electrochemical device includes a positive electrode, a negative electrode, and an electrolyte having lithium ion conductivity. The positive electrode includes a positive current collector and a positive electrode mixture layer supported on the positive current collector. The positive electrode mixture layer contains a positive electrode active material reversibly doped with an anion. The negative electrode includes a negative current collector and a negative electrode mixture layer supported on the negative current collector. The negative electrode mixture layer contains a negative electrode active material reversibly doped with lithium ions. The negative electrode active material contains non-graphitizable carbon. A ratio Mp/Mn of a mass Mp of the positive electrode active material supported on a unit area of the positive electrode to a mass Mn of the negative electrode active material supported on a unit area of the negative electrode is in a range from 1.1 to 2.5, inclusive.

The invention performs a new electrode structure that increases the surface area of the electrode. An electrode structure comprises a conductive part, a grass-like dielectric material on the conductive part, and a conductive layer on the grass-like dielectric material. The conductive part and the conductive layer is electrically connected to each other.

The invention performs a new electrode structure that increases the surface area of the electrode. An electrode structure comprises a conductive part, a grass-like dielectric material on the conductive part, and a conductive layer on the grass-like dielectric material. The conductive part and the conductive layer is electrically connected to each other.

A purpose of the present invention is to provide a method for manufacturing, etc., a member for an electrochemical device in which the problem of irreversible change in the composition of the electrochemical device due to solvent depletion, moisture absorption, etc., during manufacturing of the electrochemical devices is unlikely to occur. This method for manufacturing a member for an electrochemical device includes performing at least one shaping operation described in the present specification on a shaping material composition that comprises: at least one filler (F); a plasticizer (P-S), being water, an ionic liquid, or a mixture thereof; and a polymer (P1), the shaping material composition being substantially free of an organic solvent and having plasticity and self-supporting property.

A purpose of the present invention is to provide a method for manufacturing, etc., a member for an electrochemical device in which the problem of irreversible change in the composition of the electrochemical device due to solvent depletion, moisture absorption, etc., during manufacturing of the electrochemical devices is unlikely to occur. This method for manufacturing a member for an electrochemical device includes performing at least one shaping operation described in the present specification on a shaping material composition that comprises: at least one filler (F); a plasticizer (P-S), being water, an ionic liquid, or a mixture thereof; and a polymer (P1), the shaping material composition being substantially free of an organic solvent and having plasticity and self-supporting property.

A meta-material is disclosed that includes a first layer composed of graphene, and one or more additional layers, each composed of glassy carbon or graphene. A method of producing an engineered material includes depositing a graphene precursor on a substrate, pyrolyzing the graphene precursor to allow the formation of graphene, depositing a glassy carbon precursor the graphene, pyrolyzing to allow the formation of glassy carbon from the glassy carbon precursor, depositing a graphene precursor on the glassy carbon, and pyrolyzing the graphene precursor to allow the formation of graphene.

A meta-material is disclosed that includes a first layer composed of graphene, and one or more additional layers, each composed of glassy carbon or graphene. A method of producing an engineered material includes depositing a graphene precursor on a substrate, pyrolyzing the graphene precursor to allow the formation of graphene, depositing a glassy carbon precursor the graphene, pyrolyzing to allow the formation of glassy carbon from the glassy carbon precursor, depositing a graphene precursor on the glassy carbon, and pyrolyzing the graphene precursor to allow the formation of graphene.

The present invention provides an on-chip all-solid-state supercapacitor, which includes a first electrode and a second electrode, and both the first electrode and the second electrode include a substrate, a laminated structure, a conductive thin film layer and a solid electrolyte. The laminated structure is disposed on a surface of the substrate and is provided with at least one deep trench structure; an inner surface of the deep trench structure is provided with a sacrificial layer trench, which increases the electrode area of the on-chip all-solid-state supercapacitor, and further increases the capacitance density and energy density; the conductive thin film layer covers the inner surface of the deep trench structure, an inner surface of the sacrificial layer trench, the surface of the substrate exposed in the deep trench structure and a surface of the laminated structure facing away from the substrate; the solid electrolyte is filled inside the sacrificial layer trench and the deep trench structure covered by the conductive thin film layer; the solid electrolyte also covers a surface of the conductive thin film layer facing away from the substrate, and the solid electrolyte of the first electrode and the solid electrolyte of the second electrode are bonded together. The present invention also provides a preparation method of an on-chip all-solid-state supercapacitor.

The present invention provides an on-chip all-solid-state supercapacitor, which includes a first electrode and a second electrode, and both the first electrode and the second electrode include a substrate, a laminated structure, a conductive thin film layer and a solid electrolyte. The laminated structure is disposed on a surface of the substrate and is provided with at least one deep trench structure; an inner surface of the deep trench structure is provided with a sacrificial layer trench, which increases the electrode area of the on-chip all-solid-state supercapacitor, and further increases the capacitance density and energy density; the conductive thin film layer covers the inner surface of the deep trench structure, an inner surface of the sacrificial layer trench, the surface of the substrate exposed in the deep trench structure and a surface of the laminated structure facing away from the substrate; the solid electrolyte is filled inside the sacrificial layer trench and the deep trench structure covered by the conductive thin film layer; the solid electrolyte also covers a surface of the conductive thin film layer facing away from the substrate, and the solid electrolyte of the first electrode and the solid electrolyte of the second electrode are bonded together. The present invention also provides a preparation method of an on-chip all-solid-state supercapacitor.

A flexible energy storage device with a redox-active polymer hydrogel electrolyte is provided. The flexible energy storage device can include a pair of electrodes separated by the redox-active polymer hydrogel electrolyte. The redox-active polymer hydrogel electrolyte can include a polymer hydrogel, charge balancing anions and redox-active transition metal cations at least one selected from the group consisting of vanadium, chromium, manganese, cobalt, and copper. The flexible energy storage device may retain greater than 75% of an unbent specific capacitance when bent at an angle of 100 to 170°.