A process of forming a cross-linked electronically active hydrophilic co-polymer is provided and includes the steps of: a. mixing an intrinsically electronically active material and at least one compound of formula (I) with water to form an intermediate mixture; b. adding at least one hydrophilic monomer, at least one hydrophobic monomer, and at least one cross-linker to the intermediate mixture to form a co-monomer mixture; and c. polymerising the co-monomer mixture. Formula (I) is defined as: ##STR00001##
where R.sup.1 and R.sup.2 are independently optionally substituted C.sub.1-C.sub.6 alkyl and X.sup.− is an anion.

There is provided herein a process of integrating electrically conductive material into a surface layer of an electrically conductive polymer, comprising the steps of including an electrically conductive material in a polymerisation mixture capable of forming an electrically conductive polymer, such that the material is provided across an uppermost and/or a lowermost region of the polymerisation mixture; and subsequently polymerising the polymerisation mixture. Also provided is an electrically conductive polymer and a supercapacitor formed using the process.

There is provided herein a process of integrating electrically conductive material into a surface layer of an electrically conductive polymer, comprising the steps of including an electrically conductive material in a polymerisation mixture capable of forming an electrically conductive polymer, such that the material is provided across an uppermost and/or a lowermost region of the polymerisation mixture; and subsequently polymerising the polymerisation mixture. Also provided is an electrically conductive polymer and a supercapacitor formed using the process.

A purpose of the present invention is to provide a method for manufacturing, etc., a member for an electrochemical device in which the problem of irreversible change in the composition of the electrochemical device due to solvent depletion, moisture absorption, etc., during manufacturing of the electrochemical devices is unlikely to occur. This method for manufacturing a member for an electrochemical device includes performing at least one shaping operation described in the present specification on a shaping material composition that comprises: at least one filler (F); a plasticizer (P-S), being water, an ionic liquid, or a mixture thereof; and a polymer (P1), the shaping material composition being substantially free of an organic solvent and having plasticity and self-supporting property.

A purpose of the present invention is to provide a method for manufacturing, etc., a member for an electrochemical device in which the problem of irreversible change in the composition of the electrochemical device due to solvent depletion, moisture absorption, etc., during manufacturing of the electrochemical devices is unlikely to occur. This method for manufacturing a member for an electrochemical device includes performing at least one shaping operation described in the present specification on a shaping material composition that comprises: at least one filler (F); a plasticizer (P-S), being water, an ionic liquid, or a mixture thereof; and a polymer (P1), the shaping material composition being substantially free of an organic solvent and having plasticity and self-supporting property.

The present invention provides an on-chip all-solid-state supercapacitor, which includes a first electrode and a second electrode, and both the first electrode and the second electrode include a substrate, a laminated structure, a conductive thin film layer and a solid electrolyte. The laminated structure is disposed on a surface of the substrate and is provided with at least one deep trench structure; an inner surface of the deep trench structure is provided with a sacrificial layer trench, which increases the electrode area of the on-chip all-solid-state supercapacitor, and further increases the capacitance density and energy density; the conductive thin film layer covers the inner surface of the deep trench structure, an inner surface of the sacrificial layer trench, the surface of the substrate exposed in the deep trench structure and a surface of the laminated structure facing away from the substrate; the solid electrolyte is filled inside the sacrificial layer trench and the deep trench structure covered by the conductive thin film layer; the solid electrolyte also covers a surface of the conductive thin film layer facing away from the substrate, and the solid electrolyte of the first electrode and the solid electrolyte of the second electrode are bonded together. The present invention also provides a preparation method of an on-chip all-solid-state supercapacitor.

The present invention provides an on-chip all-solid-state supercapacitor, which includes a first electrode and a second electrode, and both the first electrode and the second electrode include a substrate, a laminated structure, a conductive thin film layer and a solid electrolyte. The laminated structure is disposed on a surface of the substrate and is provided with at least one deep trench structure; an inner surface of the deep trench structure is provided with a sacrificial layer trench, which increases the electrode area of the on-chip all-solid-state supercapacitor, and further increases the capacitance density and energy density; the conductive thin film layer covers the inner surface of the deep trench structure, an inner surface of the sacrificial layer trench, the surface of the substrate exposed in the deep trench structure and a surface of the laminated structure facing away from the substrate; the solid electrolyte is filled inside the sacrificial layer trench and the deep trench structure covered by the conductive thin film layer; the solid electrolyte also covers a surface of the conductive thin film layer facing away from the substrate, and the solid electrolyte of the first electrode and the solid electrolyte of the second electrode are bonded together. The present invention also provides a preparation method of an on-chip all-solid-state supercapacitor.

A flexible energy storage device with a redox-active polymer hydrogel electrolyte is provided. The flexible energy storage device can include a pair of electrodes separated by the redox-active polymer hydrogel electrolyte. The redox-active polymer hydrogel electrolyte can include a polymer hydrogel, charge balancing anions and redox-active transition metal cations at least one selected from the group consisting of vanadium, chromium, manganese, cobalt, and copper. The flexible energy storage device may retain greater than 75% of an unbent specific capacitance when bent at an angle of 100 to 170°.

A flexible energy storage device with a redox-active polymer hydrogel electrolyte is provided. The flexible energy storage device can include a pair of electrodes separated by the redox-active polymer hydrogel electrolyte. The redox-active polymer hydrogel electrolyte can include a polymer hydrogel, charge balancing anions and redox-active transition metal cations at least one selected from the group consisting of vanadium, chromium, manganese, cobalt, and copper. The flexible energy storage device may retain greater than 75% of an unbent specific capacitance when bent at an angle of 100 to 170°.

A solid electrolyte (10) of the present disclosure includes porous silica (11) having a plurality of pores (12) interconnected mutually and an electrolyte (13) coating inner surfaces of the plurality of pores (12). The electrolyte (13) includes 1-ethyl-3-methylimidazolium bis(fluorosulfonyl)imide represented by EMI-FSI and a lithium salt dissolved in the EMI-FSI. A molar ratio of the EMI-FSI to the porous silica (11) is larger than 1.0 and less than 3.5.