A micro or nano electromechanical relay device (10) comprising a source electrode (204) an electrically conductive beam (202) comprising an arcuate portion (12a) coupled to the source electrode by an arm portion, first and second drain electrodes (DE1, DE2) and first and second actuator electrodes (AE1, AE2). The arc of the arcuate portion defines a beam axis (BA). The arcuate portion is mounted for pivotal movement about a pivot axis (PA) which is coaxial or generally coaxial with the beam axis.

A electromechanical relay device (100) comprising a source electrode (102), a beam (104) mounted on the source electrode at a first end and electrically coupled to the source electrode; a first drain electrode (112) located adjacent a second end of the beam, wherein a first contact (110) on the beam is arranged to be separated from a second contact (112) on the first drain electrode when the relay device is in a first condition; a first gate electrode (106 arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition; and wherein the first and second contacts are each coated with a layer of nanocrystalline graphite.

Described herein is a technique capable of forming a sacrificial film with a high wet etching rate so as to obtain a wet etching selectivity with respect to a movable electrode when manufacturing a cantilever structure sensor. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) placing a substrate with a sacrificial film containing impurities on a substrate support in a process chamber, wherein the sacrificial film is formed so as to cover a control electrode, a pedestal and a counter electrode formed on the substrate; (b) heating the substrate; and (c) modifying the sacrificial film into a modified sacrificial film by supplying an oxygen-containing gas in a plasma state to the substrate to desorb the impurities from the sacrificial film after (b).

Methods of operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.

Methods of forming and operating a switching device are provided. The switching device is formed in an interconnect, the interconnect including a plurality of metallization levels, and has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

A magnetically actuated MEMS switch 100 includes a first magnetic core portion 120, a first signal line 15, a first contact point 16, a second magnetic core portion 220, a second signal line 25, a second contact point 26, and a first coil portion 111 and a second coil portion 211 serving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portion 120 and the second magnetic core portion 220. The first contact point 16 is displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact point 16 and the second contact point 26 are switched in response to displacement of the first contact point 16.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

An environmental physical sensor is provided that includes a power input terminal, a sensor output terminal, and a resonant switch. The resonant switch includes a mechanical element that is responsive to an environmental stimulus and is coupled to an electrical switch. The electrical switch is operable between an open position and a closed position and electrically connects the power input terminal to the sensor output terminal when in the closed position. The mechanical element is configured to intermittently actuate the electrical switch into the closed position responsive to the environmental stimulus.