Deep via technology is used to construct an integrated silicon cantilever and cavity oriented in a vertical plane which creates an electrostatically-switched MEMS switch in a small wafer area. Another embodiment is a small wafer area electrostatically-switched, vertical-cantilever MEMS switch wherein the switch cavity is etched within a volume defined by walls grown internally within a silicon substrate using through vias.

[Object] To be capable of promptly performing a switching operation of a switch. [Solving Means] In a switching apparatus according to an embodiment of the present technology, a movable electrode includes a first movable electrode piece, a second movable electrode piece, and a movable contact point. A first fixed electrode includes first and second fixed electrode pieces, the first and second fixed electrode pieces facing each other with the first movable electrode piece disposed between the first and second fixed electrode pieces, the first fixed electrode piece facing the first movable electrode piece with a gap narrower than a gap between the second fixed electrode piece and the first movable electrode piece. A second fixed electrode includes third and fourth fixed electrode pieces, the third and fourth fixed electrode pieces facing each other with the second movable electrode piece disposed between the third and fourth fixed electrode pieces, the third fixed electrode piece facing the second movable electrode piece with a gap narrower than a gap between the fourth fixed electrode piece and the second movable electrode piece. A first fixed contact point is in contact with the movable contact point, the movable contact point moving in a first direction by an electrostatic attractive force between the movable electrode and the first fixed electrode. A second fixed contact point is in contact with the movable contact point, the movable contact point moving in a second direction opposite to the first direction by an electrostatic attractive force between the movable electrode and the second fixed electrode.

A microelectromechanical resonant switch (resoswitch) converts received radio frequency (RF) energy into an output signal with zero quiescent power usage by using a resonant element with a passband input sensitivity of: <60 dBm, <68 dBm, and <100 dBm. The resoswitch first accepts incoming amplitude- or frequency-shift keyed RF energy at a carrier frequency, filters it, provides power gain via resonant impact switching, and finally envelop detects impact impulses to demodulate and recover the modulating waveform. Mechanical gain may be used to amplify received signals, whose amplitudes may be binned, thereby preserving use of amplitude modulated (AM) signals. A second resoswitch may be used to control additional circuitry, whereby the first resoswitch detects a control signal output to the additional circuitry.

A contact element of a MEMS relay. The contact element includes a defined number greater than one of electrically conductive contact bodies, wherein the contact bodies are arranged at least partially within a layer that is plastically deformable in a defined manner, wherein a hardness of the plastically deformable layer is less than a hardness of the contact bodies, wherein, by exerting a compressive force on the contact bodies, the contact bodies can be pressed into the plastically deformable layer and brought to a substantially uniform height level, and wherein the plastically deformable layer is arranged at least partially within an insulation layer.

An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.

Systems and methods for forming an electrostatic MEMS switch that is used to switch a source of current or voltage. At least one surface of the MEMS switch may be rotated on approach to another substrate, such that when the surfaces are separated, the forces are shearing forces rather than static frictional forces.

According to various embodiments, there is provided a micro-electromechanical resonator, including a substrate with a cavity therein; and a resonating structure suspended over the cavity, the resonating structure having a first end anchored to the substrate, wherein the resonating structure is configured to flex in a flexural mode along a width direction of the resonating structure, wherein the width direction is defined at least substantially perpendicular to a length direction of the resonating structure, wherein the length direction is defined from the first end to a second end of the resonating structure, wherein the second end opposes the first end.

An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.

A microelectromechanical device, in particular a non-volatile memory module or a relay, comprising: a mobile body including a top region and a bottom region; top electrodes facing the top region; and bottom electrodes, facing the bottom region. The mobile body is, in a resting condition, at a distance from the electrodes. The latter can be biased for generating a movement of the mobile body for causing a direct contact of the top region with the top electrodes and, in a different operating condition, a direct contact of the bottom region with the bottom electrodes. In the absence of biasing, molecular-attraction forces maintain in stable mutual contact the top region and the top electrodes or, alternatively, the bottom region and the bottom electrodes.

An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.