A microelectromechanical system (MEMS) switch implemented with a coplanar waveguide. The MEMS switch includes an input terminal, an output terminal. The MEMS switch includes a beam extending between the input terminal and the output terminal. The beam includes a first edge and a second edge coupled to a gate of the MEMS switch. The beam includes a third edge proximate the input terminal. The first edge includes a first set of finger contacts proximate a first corner of the beam and a second set of finger contacts proximate a second corner of the beam. The beam includes a fourth edge proximate the output terminal, the fourth edge opposing the third edge. The MEMS switch has a first anchor coupled to the input terminal. The first anchor includes a first segment extending from a region proximate the input terminal to a region overlying the first set of finger contacts.

Systems and methods for forming an electrostatic MEMS plate switch include forming a deformable plate on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The deformable plate may have at least one shunt bar located at a nodal line of a vibrational mode of the deformable plate, so that the shunt bar remains relatively stationary when the plate is vibrating in that vibrational mode. The second substrate may have semiconductor integrated circuits formed thereon. The second substrate may also have a shielding layer formed thereon, such as to improve the impedance characteristics of the device.

An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.10.1 m.sup.2.

Various embodiments include a microelectromechanical switching element. The element may include: a substrate with a carrier layer, an electrically insulating layer, and a semiconductor layer; a deflectable bending element formed by a freed subregion of the semiconductor layer; and a cover substrate connected to the carrier substrate. The carrier layer defines a first cutout in the region of the bending element. The cover substrate comprises a second cutout and/or an encircling spacer layer in the region of the bending element. The first cutout and the second cutout define a superordinate hollow space in which the bending element is arranged so as to be deflectable. The superordinate hollow space is delimited by the carrier layer and by the cover substrate to provide a hermetically encapsulation from the external environment.

An environmental physical sensor is provided that includes a power input terminal, a sensor output terminal, and a resonant switch. The resonant switch includes a mechanical element that is responsive to an environmental stimulus and is coupled to an electrical switch. The electrical switch is operable between an open position and a closed position and electrically connects the power input terminal to the sensor output terminal when in the closed position. The mechanical element is configured to intermittently actuate the electrical switch into the closed position responsive to the environmental stimulus.

Modules, systems, and methods for monitoring environmental conditions, such as physical, electromagnetic, thermal, and/or chemical parameters within an environment, over extended periods of time with the use of one or more electromechanical sensing devices that include a sensing device and electronic circuitry for processing an output of the sensing device and generating a output of the module. The sensing device includes a microstructure, for example, a cantilevered beam, and at least one set of contacts configured for contact-mode operation with the microstructure in response to the microstructure deflecting toward or away from the contacts when exposed to the parameter of interest. The microstructure has a stack of layers of dissimilar materials, at least one of which has at least one property that changes as a result of curing of or absorption by the first material when exposed to the parameter.

The present invention generally relates to an RF MEMS DVC and a method for manufacture thereof. To ensure that undesired grain growth does not occur and contribute to an uneven RF electrode, a multilayer stack comprising an AlCu layer and a layer containing titanium may be used. The titanium diffuses into the AlCu layer at higher temperatures such that the grain growth of the AlCu will be inhibited and the switching element can be fabricated with a consistent structure, which leads to a consistent, predictable capacitance during operation.

A micro-electromechanical-system (MEMS) switch (1) is formed in a substrate (2) and includes a first RF signal line (3) and a second RF signal line (4), a deformable membrane (5), an activator (7) configured to deform the membrane (5), a substrate track, and a membrane track. The RF signal lines (3, 4) are connected by one of the membrane track and the substrate track. A membrane RF ground (9, 10) is integrated into the membrane (5), and the membrane RF ground is electrically connected to a substrate RF ground (11, 12, 3, 14), the membrane RF ground framing and being formed parallel to at least one among the membrane track (8) and the substrate track, such that the RF ground (9, 10) closely follows the RF signal path, in order to guide the propagation of the RF signal of the first RF signal line (3) to the second RF signal line (4) when the switch is in the on state.

A microelectromechanical systems (MEMS) switch device including current sensing and overcurrent protection can include a movable plate movable between an open position and a closed position, wherein the moveable plate is moved by applying at least one or more of an electrostatic force and a magnetic force to move the movable plate. The movable plate can include a shunt operable to conduct current when the movable plate is the closed position. An inductive coil electronically coupled to the shunt can detect current conducted through the shunt.

A MEMS switch includes a first signal line provided in a first beam, a first GND adjacent to the first signal line, a second signal line provided in a second beam, and a second GND adjacent to the second signal line. A contact terminal is fixed to any one of the first signal line and the second signal line and performs connection between the first signal line and the second signal line according to deformation of the first beam.