Patent classifications
H01H11/048
ELECTRODE MATERIAL AND METHOD FOR MANUFACTURING ELECTRODE MATERIAL
It is an electrode material that is used as an electrode contact of a vacuum interrupter and that contains one or more parts by weight of a heat-resistant element and one part by weight of Cr, the remainder being Cu and an unavoidable impurity. A part of Cr powder and the heat-resistant element powder are mixed together, and this mixed powder is sintered such that a peak corresponding to Cr element disappears in X-ray diffraction measurement. A solid solution powder obtained by pulverizing a sintered body of the heat-resistant element and Cr obtained by the sintering is mixed with the remaining Cr powder, and this mixed powder is shaped and then sintered. A sintered body obtained by this sintering is infiltrated with Cu.
ELECTRICAL SWITCHING CONTACT
The disclosure relates to an electrical switching contact, including a contact carrier and a contact plating, which has a contact material, and to a method for producing the electrical switching contact. The disclosure is characterized in that a layer that may be sintered is arranged between the contact material and the contact carrier in order to connect the contact material to the contact carrier.
METHOD FOR MANUFACTURING ELECTRODE MATERIAL AND ELECTRODE MATERIAL
It is a method for manufacturing an electrode material containing Cu, Cr, a heat-resistant element, and a low melting metal. A Cr powder and a heat-resistant element powder are mixed together in a ratio such that the Cr is greater than the heat-resistant element by weight. The mixed powder of the heat-resistant element and the Cr powder is baked. A MoCr solid solution obtained by the baking and containing a solid solution of the heat-resistant element and the Cr is pulverized and then classified. The classified MoCr solid solution powder, a Cu powder, and a low-melting metal powder are mixed together, followed by sintering at a temperature that is 1010 C. or higher and is lower than 1038 C., thereby obtaining the electrode material.
Monolithic contact system and method of forming
A circuit breaker having a monolithic structure and method of making is disclosed. The monolithic structure includes an arm portion having copper and a contact portion having a composite material. The composite material has a metallic matrix and a second phase disposed in the metallic matrix. The method of making the monolithic structure includes introducing a first powder into a first region of a mold, introducing a second powder into a second region of the mold, and consolidating the first powder and the second powder together. The first region of the mold corresponds to a contact portion, and the second region corresponds to an arm portion of the monolithic structure of the circuit breaker.
CONTACT MEMBER, SLIDING CONTACT, ELECTRICAL DEVICE AND METHOD FOR PRODUCING CONTACT MEMBER
A surface layer including a base material made of a conductor and dispersed particles dispersed in the base material is formed on a surface of a fixed contact, and the dispersed particles each include a base particle that is metal oxide and a coating layer formed on an outer surface of the base particle.
METHOD FOR PRODUCING ELECTRODE MATERIAL AND ELECTRODE MATERIAL
It is a method for producing an electrode material containing Cu, Cr and a heat-resistant element. A heat-resistant element powder and a Cr powder are mixed together in a ratio such that the heat-resistant element is less than the Cr by weight. A mixed powder of the heat-resistant element powder and the Cr powder is baked. A sintered body obtained by the baking and containing a solid solution of the heat-resistant element and the Cr is pulverized, and a solid solution powder obtained by the pulverizing is classified, to have a particle size of 200 m or less. 10-60 parts by weight of the classified solid solution powder and 90-40 parts by weight of a Cu powder are mixed together, followed by sintering to obtain the electrode material. If a low melting metal powder having a median size of 5-40 m is mixed with a mixed powder of the solid solution powder and the Cu powder, the deposition resistance property is further improved.
CONTACT ASSEMBLY FOR ELECTRICAL DEVICES AND METHOD FOR MAKING
A contact assembly for an electrical device and a method for making such an assembly are presented. The contact assembly comprises a substrate and a contact material disposed on the substrate. The contact material comprises a composite material comprising a refractory material and a matrix material. The matrix material has a higher ductility than the refractory material. The composite material further comprises a core region and an outer region bounding the core region, the core region having a higher concentration of the refractory material than the outer region. The method applies cold spraying a blended feedstock to produce a layer that includes the composite material described above.
CONTACT DISK FOR A VACUUM SWITCH, VACUUM SWITCH AND PRODUCTION METHOD FOR A CONTACT DISK
A contact disc of a contact element for a vacuum switch is provided, which includes predominantly of a first conductive material or composite material and has a plurality of inlets distributed over the circumference and made of a second material with a lower level of conductivity relative to the first material or composite material, which, during a switching process of the vacuum switch, bring about the formation of a magnetic field and thereby a movement of an arising arc on a predefined path and/or an extensive propagation of the arc. A production method for a contact disc of this type is also provided.
CONTACT CARRIER FOR A VACUUM SWITCH, VACUUM SWITCH AND PRODUCTION METHOD FOR A CONTACT CARRIER
A contact carrier of a contact element for a vacuum switch is provided, which includes predominantly of a first conductive material or composite material and has a plurality of inlets of a second material distributed over the circumference, which bring about the formation of a magnetic field and thereby a movement of an arising arc on a predefined path during a switching process of the vacuum switch, wherein the second material has a lower level of conductivity relative to the first material or composite material and is introduced into the first material during the shaping of the contact carrier basic form. A production method for a contact carrier of this type is also provided.
Magnetically aligned circuit
Examples are disclosed that relate to magnetically aligned switching circuits. One disclosed example provides an electronic component comprising a first terminal, a second terminal, and a deformable host material arranged between the first terminal and the second terminal. Aligned magnetically within the host material is an ensemble of particles each comprising a ferromagnetic material, each particle having greater electrical conductivity than the host material. The ensemble of particles is configured to form at least one complete conduction path from the first terminal to the second terminal.