A power control circuit includes first and second electrical power terminals connected across a source of electrical power. A heating element is connected to the first terminal. A heating element controller is connected in series with the heating element, between the heating element and the second terminal. The controller is configured to control a temperature level of the element, and includes a control input configured to receive a range of temperature settings, and an OFF command for the element. The controller includes an ON/OFF switch to disconnect the element from the second terminal, and a temperature level control switch to intermittently connect/disconnect the element to the second terminal. A jumper wire series-connects the ON/OFF switch to the temperature level control switch. The ON/OFF switch, the jumper wire, the temperature level control switch, and the element are electrically connected in series.

The invention relates to a temperature switch comprising a housing (2), a switching system (3) consisting of a first support (3.1) with a fixed contact (3.2) and a second support (3.3), on which a switch spring (3.4) with a switch contact (3.5) is arranged and a switching arrangement (4), which effects a positional change of the switch contact (3.5) as a function of the temperature.

The invention relates to a temperature switch comprising a housing (2), a switching system (3) consisting of a first support (3.1) with a fixed contact (3.2) and a second support (3.3), on which a switch spring (3.4) with a switch contact (3.5) is arranged and a switching arrangement (4), which effects a positional change of the switch contact (3.5) as a function of the temperature.

A method is provided. The method comprises: providing a semiconductor substrate; depositing a heater element over the semiconductor substrate; depositing an insulator layer on the heater element; depositing a conductor material having a programmable conductivity on the insulator layer, wherein a capacitance between the conductor material and the heater element is configured to be controlled such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed; depositing a dielectric layer on the conductor material; patterning and etching a first opening and a second opening in the dielectric layer; and depositing a first via in the first opening and a second via in the second opening.

A method is provided. The method comprises: providing a semiconductor substrate; depositing a heater element over the semiconductor substrate; depositing an insulator layer on the heater element; depositing a conductor material having a programmable conductivity on the insulator layer, wherein a capacitance between the conductor material and the heater element is configured to be controlled such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed; depositing a dielectric layer on the conductor material; patterning and etching a first opening and a second opening in the dielectric layer; and depositing a first via in the first opening and a second via in the second opening.