A microelectromechanical switch having improved isolation and insertion loss characteristics and reduced liability for stiction. The switch includes a signal line having an input port and an output port between first and second ground planes. The switch also includes a beam for controlling activation of the switch. In some embodiments, the switch further includes one or more defected ground structures formed in the first and second ground planes, and a corresponding secondary deflectable beam positioned over each defected ground structure. In some embodiments, the switch includes a metamaterial structure for generating a repulsive Casimir force.

Microelectromechanical systems (MEMS) switches are described. The MEMS switches can be actively opened and closed. The switch can include a beam coupled to an anchor on a substrate by one or more hinges. The beam, the hinges and the anchor may be made of the same material in some configurations. The switch can include electrodes, disposed on a surface of the substrate, for electrically controlling the orientation of the beam. The hinges may be thinner than the beam, resulting in the hinges being more flexible than the beam. In some configurations, the hinges are located within an opening in the beam. The hinges may extend in the same direction of the axis of rotation of the beam and/or in a direction perpendicular to the axis of rotation of the beam.

A micro-electromechanical-system (MEMS) switch (1) is formed in a substrate (2) and includes a first RF signal line (3) and a second RF signal line (4), a deformable membrane (5), an activator (7) configured to deform the membrane (5), a substrate track, and a membrane track. The RF signal lines (3, 4) are connected by one of the membrane track and the substrate track. A membrane RF ground (9, 10) is integrated into the membrane (5), and the membrane RF ground is electrically connected to a substrate RF ground (11, 12, 3, 14), the membrane RF ground framing and being formed parallel to at least one among the membrane track (8) and the substrate track, such that the RF ground (9, 10) closely follows the RF signal path, in order to guide the propagation of the RF signal of the first RF signal line (3) to the second RF signal line (4) when the switch is in the on state.

A method of mitigating self-actuation of a switch may comprise generating a tracking signal, based on an input signal that the switch is configured to convey, and combining the tracking signal with an actuating signal to generate a modified actuating signal. The actuating signal may be configured to change a state of the switch from a first state (e.g., ON) to a second state (e.g., OFF). The method further comprises selectively applying the modified actuating signal to a gate of the switch. A switch self-actuation mitigation system may comprise a first coupling device for electrically couple an AC component of a first signal to a node, where the first signal is applied a switch input. The system may further comprise a second coupling device configured to electrically couple an actuating signal to the node, and a driving device configured to selectively couple the node to a gate of the switch.

Impedance paths for integrated circuits having microelectromechanical systems (MEMS) switches that allow for electrical charge to bleed from circuit nodes to fixed electric potentials (e.g., ground) are described. Such paths are referred to herein as charge bleed circuits. The circuit nodes may be circuit locations where electrical charge may accumulate because there is no other path for the electrical charge to dissipate. In some embodiments, a charge bleed circuit includes a switchable device (e.g., a MEMS switch, a solid-state device switch, or a circuit including various solid-state device switches that, collectively, implement a device that can be switched on and off) that connects and disconnects the impedance path from a circuit node. This may allow the device to perform different types of measurements at desired performance levels.

The present disclosure provides a radio frequency micro-electro-mechanical switch and a radio frequency device, belong to the field of micro-electro-mechanical systems technology, and can at least partially solve a problem that functional performance of an existing radio frequency micro-electro-mechanical switch is easily to be affected in scenarios such as bending deformation of devices. The radio frequency micro-electro-mechanical switch provided by the present disclosure includes: a substrate; and a signal electrode, a first ground electrode, a second ground electrode and a connecting membrane bridge disposed on the substrate, the connecting membrane bridge crosses over the signal electrode, two ends of the connecting membrane bridge are connected to the first ground electrode and the second ground electrode respectively, and the connecting membrane bridge includes a stretchable structure being stretchable in a stretchable direction the same as an extending direction in which the connecting membrane bridge extends.

A micro-electromechanical-system (MEMS) switch (1) is formed in a substrate (2) and includes a first RF signal line (3) and a second RF signal line (4), a deformable membrane (5), an activator (7) configured to deform the membrane (5), a substrate track, and a membrane track. The RF signal lines (3, 4) are connected by one of the membrane track and the substrate track. A membrane RF ground (9, 10) is integrated into the membrane (5), and the membrane RF ground is electrically connected to a substrate RF ground (11, 12, 3, 14), the membrane RF ground framing and being formed parallel to at least one among the membrane track (8) and the substrate track, such that the RF ground (9, 10) closely follows the RF signal path, in order to guide the propagation of the RF signal of the first RF signal line (3) to the second RF signal line (4) when the switch is in the on state.

The disclosure is directed to microelectromechanical system (MEMS) switches with multiple pull-down electrodes between terminal electrodes to limit off-state capacitance. In exemplary aspects disclosed herein, a plurality of pull-down electrodes are positioned between the input terminal electrode and the output terminal electrode. The plurality of pull-down electrodes are offset from each other to limit off-state capacitance between the input terminal electrode and the output terminal electrode. The separation between the pull-down electrodes disrupts the off-state capacitive path between the input terminal electrode and the output terminal electrode, thereby further insulating the contacts from each other. Limiting off-state capacitance reduces on-state electrical loss and increases off-state electrical isolation for improved performance.

The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.

A microelectromechanical switch having improved isolation and insertion loss characteristics and reduced liability for stiction. The switch includes a signal line having an input port and an output port between first and second ground planes. The switch also includes a beam for controlling activation of the switch. In some embodiments, the switch further includes one or more defected ground structures formed in the first and second ground planes, and a corresponding secondary deflectable beam positioned over each defected ground structure. In some embodiments, the switch includes a metamaterial structure for generating a repulsive Casimir force.