The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.

A microelectromechanical system switch includes a signal input line, a signal output line, a deformable conducting membrane electrically connected to the signal output line and including a contact dimple facing the signal input line, and an actuation electrode. The membrane has a planar round shape, with a radial opening in the direction of the signal input line, narrowing from the periphery towards the center of the membrane, the contact dimple being formed in the central region of the membrane, the actuation electrode has the same shape as the membrane, and the gap between the membrane, facing the actuation electrode, and the actuation electrode is an airgap only.

A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

A microelectromechanical system (MEMS) switch with liquid dielectric and a method of fabrication thereof are provided. In the context of the MEMS switch, a MEMS switch is provided including a cantilevered source switch, a first actuation gate disposed parallel to the cantilevered source switch, a first drain disposed parallel to a movable end of the cantilevered source switch, and a liquid dielectric disposed within a housing of the microelectromechanical system switch.

An electrostatic actuator includes: a fixed driving electrode that is disposed on a silicon substrate; a movable driving electrode that is disposed so as to face the fixed driving electrode and approaches the fixed driving electrode with an electrostatic force generated between the movable driving electrode and the fixed driving electrode; and a pair of spacers that comes in contact with the movable driving electrode in an approaching state in which the fixed driving electrode and the movable driving electrode approach each other and forms a prescribed air gap between the fixed driving electrode and the movable driving electrode, wherein each of the spacers has a spacer electrode portion that comes in contact with the movable driving electrode via an insulator and has the same potential as one of the electrodes at least in the approaching state.

Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.

The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent C.sub.max value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.

A microelectromechanical device is disclosed and described. The microelectromechanical device can include a base having a raised support structure. The microelectromechanical device can also include a biasing electrode supported by the base. The microelectromechanical device can further include a displacement member supported by the raised support structure. The displacement member can have a movable portion extending from the raised support structure and spaced from the biasing electrode by a gap. The movable portion can be movable relative to the base by deflection of the displacement member. The displacement member can also have a piezoelectric material associated with the movable portion. In addition, the microelectromechanical device can include a voltage source electrically coupled to the piezoelectric material and the biasing electrode. The voltage source can apply a biasing voltage to the piezoelectric material and the biasing electrode to cause deflection of the displacement member toward the biasing electrode, thereby reducing the gap between the movable portion and the biasing electrode. Further deflection of the displacement member can cause an increase in voltage across the piezoelectric material and the biasing electrode sufficient to pull the movable portion into contact with the biasing electrode.

An MEMS device, having two substantially parallel surfaces are separated by an initial distance. At least one of the surfaces includes a raised feature that limits the gap between the surfaces to less than the initial distance when an actuating voltage is applied. In some embodiments, the raised feature limits the gap to about 66% of the initial distance.

A radio frequency micro-electromechanical switch (RF MEMS switch) is described. Also described is a method of producing such an RF MEMS switch. The method can include depositing on a substrate a first sacrificial layer and producing a pattern. A first layer of metal is deposited on the first sacrificial layer and on the substrate. A pattern is produced to form a first RF line and a first MEMS membrane. A second sacrificial layer is deposited on the first RF line and a pattern is produced. A dielectric layer is deposited on the second sacrificial layer and then a pattern is produced to form a dome. The first and second sacrificial layers are removed through a dome opening. A second metal layer is deposited on the dome and on the substrate, and then a pattern is produced to plug the dome opening(s) and to form a second RF line.