Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

A fuse production method includes the steps of forming a liquid film of a dispersion liquid, in which metal nanoparticles are dispersed in a solvent, on a principal surface of a substrate containing at least an organic substance, heating the liquid film so as to vaporize the solvent to melt or sinter the metal nanoparticles and to soften or melt the principal surface, and forming a fuse film on the principal surface by fusing the melted or sintered metal nanoparticles and the softened or melted principal surface with each other.

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

A fuse according to an embodiment disclosed herein includes a printed circuit board (PCB); a conductive pattern disposed on the PCB; a film disposed at lateral sides of the conductive pattern or on a partial region of the conductive pattern to leave an open region; and a coating disposed on the conductive pattern and the film.

Disclosed is an SMD micro mixed fuse with a thermal fuse function that stably operates at high voltage surges and can interrupt electrical current at a predetermined temperature. The SMD micro mixed fuse includes: a fuse substrate provided with a first electrode and a second electrode; a variator layer formed on a front surface of the fuse substrate; a first contact terminal and a second contact terminal respectively arranged at a first side and a second side of a front surface of the varistor layer and respectively connected to the first electrode and the second electrode; at least one thermal fuse that is arranged on the front surface of the variator layer, is not connected to the first and second contact terminals, but is connected to the fuse substrate; and a fusible element that is wire-bonded to the first and second contact terminals and is not connected to the thermal fuse.

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.

Electrical fuse (eFuse) and resistor structures and methods of manufacture are provided. The method includes forming metal gates having a capping material on a top surface thereof. The method further includes protecting the metal gates and the capping material during an etching process which forms a recess in a dielectric material. The method further includes forming an insulator material and metal material within the recess. The method further includes forming a contact in direct electrical contact with the metal material.