H01J1/35

ELECTRON EMITTER STRUCTURE, EXTERNAL PHOTOELECTRIC EFFECT EMITTER, PARTICLE COLLECTING DEVICE, TUNNEL SURFACE EMITTER, SEMICONDUCTOR-BASED DIRECT EMITTER AND LIQUID IONISER COMPRISING SAME, GAS SENSOR COMPRISING AN EMITTER OR EMITTER STRUCTURE, METHOD FOR GENERATING FREE ELECTRONS, AND METHOD FOR COLLECTING PARTICLES
20240266134 · 2024-08-08 · ·

An electron emitter structure includes an electron emission layer which is arranged to have a first side and a second side, and an electron accelerating structure which is arranged on the first side of the electron emission layer. The electron emission layer has a mixture of metals so as to be atmospherically stable. The electron accelerating structure has at least one electrode which is electrically insulated from the electron accelerating structure so as to form an acceleration path which allows electrons which are released from the electron emission layer to be selectively accelerated upon generation of an adjustable electric field. The acceleration path has a length l of from 10 nm to 1 ?m.

Multi charged particle beam blanking apparatus, multi charged particle beam blanking method, and multi charged particle beam writing apparatus
10147580 · 2018-12-04 · ·

A multi charged particle beam blanking apparatus includes a substrate, where a plurality of passage holes are formed, to let multi-beams of charged particle beams individually pass through a passage hole concerned; a plurality of reference electrodes, each arranged close to a corresponding passage hole, to be applied with a reference potential, not a ground potential, not via a transistor circuit, in an irradiation region of the whole multi-beams; and a plurality of switching electrodes, arranged at the substrate such that each of the plurality of switching electrodes and a corresponding paired one of the plurality of reference electrodes are opposite each other across a corresponding passage hole, to be applied with the reference potential and a control potential different from the reference potential in a switchable manner.

Electron emission device and transistor provided with the same

An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.

Electron emission device and transistor provided with the same

An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.