An optical element for a lithographic apparatus, the optical element including an anchor layer selected to support a top layer having self-terminating growth in an operating lithographic apparatus or plasma containing environment. Also described is a method of manufacturing an optical element, the method including depositing a top layer on anchor layer via exposure to plasma, preferably electromagnetically induced plasma. Lithographic apparatuses including such optical elements are also described.

An apparatus comprising at least one sealing aperture (40) comprising a hollow part (41), having an inner surface (42), extending at an interface between different zones (50;60) of the apparatus; and a member (43) positioned in the hollow part configured to substantially transmit EUV radiation and to substantially filter non-EUV radiation at the interface; wherein the inner surface of the hollow part has a surface treatment configured to increase absorption of the non-EUV radiation that is transferred by the member to the hollow part.

An electron beam 3D printing machine, comprising a chamber for generating and accelerating an electron beam and an operating chamber in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber for generating and accelerating an electron beam houses means for generating an electron beam and means for accelerating the generated electron beam, while the operating chamber houses at least one platform for depositing the metal powder, metal powder handling means and electron beam deflection means. The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

An electron beam 3D printing machine, comprising a chamber for generating and accelerating an electron beam and an operating chamber in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber for generating and accelerating an electron beam houses means for generating an electron beam and means for accelerating the generated electron beam, while the operating chamber houses at least one platform for depositing the metal powder, metal powder handling means and electron beam deflection means. The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

An x-ray window can include a thin film that comprises boron. The thin film can be relatively thin, such as for example ≤200 nm. This x-ray window can be strong; can have high x-ray transmissivity; can be impervious to gas, visible light, and infrared light; can be easy of manufacture; can be made of materials with low atomic numbers, or combinations thereof. The thin film can include an aluminum layer. A support structure can provide additional support to the thin film. The support structure can include a support frame encircling an aperture and support ribs extending across the aperture with gaps between the support ribs. The support structure can also include boron ribs aligned with the support ribs.

According to an example aspect of the present invention, there is provided a radiation window manufacturing method, comprising patterning a mask on a top surface of a bulk wafer or compound wafer, etching the bulk or compound wafer from the top surface, based on the mask, either by timed etching of the bulk wafer, or until an inner insulator layer of the compound wafer, thereby generating recesses in the bulk or compound wafer, filling the recesses, at least partly, with a filling material, polishing the top surface of the bulk or compound wafer, and providing a membrane layer on the polished top surface, and etching the bulk or compound wafer from a bottom surface, opposite the top surface, to build a supporting structure for the membrane layer in accordance with a shape defined by the mask.

In an embodiment a radiation detector includes a semiconductor body configured to detect X-rays having a radiation entrance side, an electrically conductive window layer areally arranged to the radiation entrance side, the window layer having boron and/or carbon and having a thickness of at most 20 nm and an electrically conductive bar structure on the window layer and in electrical contact with the window layer.

In an embodiment a radiation detector includes a semiconductor body configured to detect X-rays having a radiation entrance side, an electrically conductive window layer areally arranged to the radiation entrance side, the window layer having boron and/or carbon and having a thickness of at most 20 nm and an electrically conductive bar structure on the window layer and in electrical contact with the window layer.

An x-ray window can include a boron-film 12 and an aluminum-film 52 spanning an aperture 15 of a support-frame 11. The boron-film 12 and the aluminum-film 52 can be the only films, or the primary films, spanning the aperture. The boron-film 12 can include boron and hydrogen. An annular-film 32 can adjoin the support-frame 11, on an opposite side of the support-frame 11 from the boron-film 12. The annular-film 32 can include boron and hydrogen. The annular-film 32 can have the same material composition as, and can be similar in thickness with, the boron-film 12.

The x-ray windows herein can have low gas permeability, low outgassing, high strength, low visible and infrared light transmission, high x-ray flux, low atomic number materials, corrosion resistance, high reliability, and low-cost. The x-ray window can include a film 11 with a polymer layer 22 and a graphite layer 21. The film 11 can consist essentially of graphite and polymer. Most of the film 11 can be the graphite layer 21. The polymer layer 22 can be a small portion of the film 11.