Embodiments relate to an apparatus that includes an electronics layer with at least one electronic component, and a thermal energy harvesting thermionic device to receive thermal energy and generate an electrical output for powering the electronic component. The thermionic device includes a cathode, an anode spaced from the cathode, and a plurality of nanoparticles in at least one medium contained between the cathode and the anode to permit electron transfer between the cathode and the anode. An intermediate layer is positioned between the thermionic device and the electronics layer. The intermediate layer is made of a gradient thermal expansion material (TEM). Related systems and methods are also provided.

An electron gun comprising a cathode having an electron emitting surface and whose planar shape is circular, a heater to increase the temperature of the cathode, and an anode to apply a positive electric potential relative to the cathode to extract electrons in a predetermined direction is provided. The cathode comprises a through hole at a central portion thereof along a central axis of the cathode, and either the cathode comprises a no-emitting layer at at least one of an opening edge on the electron emitting surface side of the through hole and an inner surface of the through hole, or the opening edge on the electron emitting surface side of the through hole is a chamfered C surface or a chamfered R surface.

An electron gun comprising a cathode having an electron emitting surface and whose planar shape is circular, a heater to increase the temperature of the cathode, and an anode to apply a positive electric potential relative to the cathode to extract electrons in a predetermined direction is provided. The cathode comprises a through hole at a central portion thereof along a central axis of the cathode, and either the cathode comprises a no-emitting layer at at least one of an opening edge on the electron emitting surface side of the through hole and an inner surface of the through hole, or the opening edge on the electron emitting surface side of the through hole is a chamfered C surface or a chamfered R surface.

The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

A method includes performing by a processor: estimating a total cathode space current for a thermionic vacuum tube having at least one grid and a plate, such that at least one amplification factor associated with the at least one grid is determined by a polynomial based on a variable that represents at plurality of voltages associated with the at least one grid and the plate, the variable being heuristically determine. Transitions between positive and negative grid operation may experience a step change in estimated current value caused by the inclusion or elimination of grid current. A part of the grid current may be added back into the plate current during transition. This small contribution to plate current may gradually diminish as tube operation moves farther away from the transition boundary.

A thermionic dispenser cathode having a refractory metal matrix with scandium and barium compounds in contact with the metal matrix and methods for forming the same. The invention utilizes atomic layer deposition (ALD) to form a nanoscale, uniform, conformal distribution of a scandium compound on tungsten surfaces and further utilizes in situ high pressure consolidation/impregnation to enhance impregnation of a BaO—CaO—Al.sub.2O.sub.3 based emissive mixture into the scandate-coated tungsten matrix or to sinter a tungsten/scandate/barium composite structure. The result is a tungsten-scandate thermionic cathode having improved emission.

In one embodiment, a system includes a cathode and a thermionic emitter installed at least partially within the cathode tube of the cathode. The thermionic emitter is in a shape of a hollow cylinder. The hollow cylinder includes an outer surface and an unsmooth inner surface. The outer surface is configured to contact an inner surface of the cathode tube. The unsmooth inner surface includes a plurality of structures that provide an increase in surface area over a smooth surface.

An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.