Patent classifications
H01J9/12
Photomultiplier and Methods of Making It
Disclosed herein is a photomultiplier comprising: an electron ejector; a detector; a substrate; and a first electrode in the substrate; a second electrode in the substrate; a third electrode in the substrate; wherein each of the first, second and third electrodes comprises a flat or curved surface at an angle to a normal direction of the substrate; wherein each of the first, second and third electrodes comprises a first end and a second end, the first end being closer to the electron ejector than the second end; wherein the first, second and third electrodes are spatially arranged such that the second ends of the first, second and third electrode are on a same plane, or such that a plane the second ends of the first and third electrodes are on crosses the second electrode.
A UV SENSITIVE PHOTOCATHODE, A METHOD FOR PRODUCING A UV SENSITIVE PHOTOCATHODE, AND A DETECTOR FOR MEASURING UV RADIATION
An ultraviolet (UV) sensitive photocathode includes a support structure, and an amorphous diamond-like carbon coating on the support structure. A method produces the UV sensitive photocathode. A UV sensitive detector is for measuring UV radiation and includes the UV sensitive photocathode.
A UV SENSITIVE PHOTOCATHODE, A METHOD FOR PRODUCING A UV SENSITIVE PHOTOCATHODE, AND A DETECTOR FOR MEASURING UV RADIATION
An ultraviolet (UV) sensitive photocathode includes a support structure, and an amorphous diamond-like carbon coating on the support structure. A method produces the UV sensitive photocathode. A UV sensitive detector is for measuring UV radiation and includes the UV sensitive photocathode.
MICROCHANNEL PLATE AND METHOD OF MAKING THE MICROCHANNEL PLATE WITH AN ELECTRON BACKSCATTER LAYER TO AMPLIFY FIRST STRIKE ELECTRONS
A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.
Integrated native oxide device based on aluminum, aluminum alloys or beryllium copper (INOD) and discrete dynode electron multiplier (DDEM)
Techniques produce integrated native metal oxide discrete elements which can be used to fabricate discrete dynode electron multiplier (DDEM) devices, for example by creating dynodes with a native oxide as secondary electron emissive (SEE) layer from a metal block. The metal block may comprise or consist of a metal base component, for example Al, Al alloys or BeCu, of metal oxide SEE materials Al2O3 or BeO. Growing a native oxide from these base metals, Al2O3 or BeO eliminates the need of a costly and time-consuming SEE coating on the dynode surface. Furthermore, aluminum alloys offer intrinsic dopant, in particular magnesium where its oxide provides a higher secondary electron yield than the aluminum oxide. The use of aluminum, its alloys or BeCu material block allows flexibility in design and fabrication of DDEM without an SEE coating process.
Photomultiplier and methods of making it
Disclosed herein is a photomultiplier comprising: an electron ejector; a detector; a substrate; and a first electrode in the substrate; a second electrode in the substrate; a third electrode in the substrate; wherein each of the first, second and third electrodes comprises a flat or curved surface at an angle to a normal direction of the substrate; wherein each of the first, second and third electrodes comprises a first end and a second end, the first end being closer to the electron ejector than the second end; wherein the first, second and third electrodes are spatially arranged such that the second ends of the first, second and third electrode are on a same plane, or such that a plane the second ends of the first and third electrodes are on crosses the second electrode.
3D PRINTED MICRO CHANNEL PLATE, METHOD OF MAKING AND USING 3D PRINTED MICRO CHANNEL PLATE
The invention provides a gain device having a plurality of channels having a polygonal shape with four or more sides. The invention also provides a method for producing microchannel plates (MCPs) having the steps of providing a pre-polymer; and directing a laser over the pre-polymer into a pre-determined pattern. Also provided is method for efficiently 3D printing an object.
3D printed micro channel plate, method of making and using 3D printed micro channel plate
The invention provides a gain device having a plurality of channels having a polygonal shape with four or more sides. The invention also provides a method for producing microchannel plates (MCPs) having the steps of providing a pre-polymer; and directing a laser over the pre-polymer into a pre-determined pattern. Also provided is method for efficiently 3D printing an object.
PHOTOCATHODE INCLUDING NANOSTRUCTURES FOR EXTENDED WAVELENGTHS
A photocathode. The photocathode includes an absorber. The absorber a p-type bulk active layer and a plurality of nanostructures formed on the p-type bulk active layer. The Photocathode further includes the plurality of nanostructures, such that the plurality of nanostructures are formed at a band bending region between the bulk active layer and the vacuum.
PHOTOCATHODE INCLUDING NANOSTRUCTURES FOR EXTENDED WAVELENGTHS
A photocathode. The photocathode includes an absorber. The absorber a p-type bulk active layer and a plurality of nanostructures formed on the p-type bulk active layer. The Photocathode further includes the plurality of nanostructures, such that the plurality of nanostructures are formed at a band bending region between the bulk active layer and the vacuum.