H01J9/14

Bi-metallic anode for amplitude modulated magnetron

An anode structure for a magnetron provides for low eddy currents and efficient water cooling. The anode structure may be made by machining a bimetal blank including an out layer of a first metal and an inner layer of a second metal and formed by explosion bonding. The second metal has a resistivity lower than first metal and a thermal conductivity higher than the first metal. The machining may result in the anode structure with vanes each having a center (tip) portion made of the second metal and the rest made of the first metal. The machined anode structure may be coated with the second metal.

Duoplasmatron ion source with a partially ferromagnetic anode

A duoplasmatron ion source with a partially ferromagnetic anode can be used in multiple applications, including the production of negative ions for secondary ion mass spectrometers and particle accelerators. A partially ferromagnetic anode, which may be embodied in a partially ferromagnetic anode insert, includes a ferromagnetic and non-ferromagnetic portions joined together at a juncture, with an ion extraction aperture defined in the ferromagnetic portion and the juncture being laterally offset from the aperture. An asymmetric magnetic field produced by the partially ferromagnetic region facilitates extraction of charged ions from the central, most intense region of a source plasma in the duoplasmatron ion source. A ferromagnetic conical portion of the anode defines the ion extraction aperture in order to maximize the magnetic field in the vicinity of this aperture.

Duoplasmatron ion source with a partially ferromagnetic anode

A duoplasmatron ion source with a partially ferromagnetic anode can be used in multiple applications, including the production of negative ions for secondary ion mass spectrometers and particle accelerators. A partially ferromagnetic anode, which may be embodied in a partially ferromagnetic anode insert, includes a ferromagnetic and non-ferromagnetic portions joined together at a juncture, with an ion extraction aperture defined in the ferromagnetic portion and the juncture being laterally offset from the aperture. An asymmetric magnetic field produced by the partially ferromagnetic region facilitates extraction of charged ions from the central, most intense region of a source plasma in the duoplasmatron ion source. A ferromagnetic conical portion of the anode defines the ion extraction aperture in order to maximize the magnetic field in the vicinity of this aperture.

SELF-ASSEMBLED HELICAL SLOW-WAVE STRUCTURES FOR HIGH-FREQUENCY SIGNALS

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

SELF-ASSEMBLED HELICAL SLOW-WAVE STRUCTURES FOR HIGH-FREQUENCY SIGNALS

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

Electrode for a discharge chamber
11127582 · 2021-09-21 · ·

A discharge chamber for a deep ultraviolet (DUV) light source includes a housing; and a first electrode and a second electrode in the housing, the first electrode and the second electrode being separated from each other to form a discharge region between the first electrode and the second electrode, the discharge region being configured to receive a gain medium including at least one noble gas and a halogen gas. At least one of the first electrode and the second electrode includes a metal alloy including more than 33% and less than 50% zinc by weight.

Electrode for a discharge chamber
11127582 · 2021-09-21 · ·

A discharge chamber for a deep ultraviolet (DUV) light source includes a housing; and a first electrode and a second electrode in the housing, the first electrode and the second electrode being separated from each other to form a discharge region between the first electrode and the second electrode, the discharge region being configured to receive a gain medium including at least one noble gas and a halogen gas. At least one of the first electrode and the second electrode includes a metal alloy including more than 33% and less than 50% zinc by weight.

SELF-ASSEMBLED HELICAL SLOW-WAVE STRUCTURES FOR HIGH-FREQUENCY SIGNALS

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

SELF-ASSEMBLED HELICAL SLOW-WAVE STRUCTURES FOR HIGH-FREQUENCY SIGNALS

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

Apparatuses, systems, and methods for ion traps
10950408 · 2021-03-16 · ·

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.