A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Provided are a plurality of embodiments, including, but not limited to, a device for generating efficient low and high average power output Gamma Rays via relativistic particle bombardment of element targets using an efficient particle injector and accelerator at low and high average power levels suitable for element transmutation and power generation with an option for efficient remediation of radioisotope release into any environment. The devices utilize diamond or diamond-like carbon materials and active cooling for improved performance. Also provided are a nuclear reactor and a decontamination device using such a device.

Provided are a plurality of embodiments, including, but not limited to, a device for generating efficient low and high average power output Gamma Rays via relativistic particle bombardment of element targets using an efficient particle injector and accelerator at low and high average power levels suitable for element transmutation and power generation with an option for efficient remediation of radioisotope release into any environment. The devices utilize diamond or diamond-like carbon materials and active cooling for improved performance. Also provided are a nuclear reactor and a decontamination device using such a device.

The present invention is directed to an electrode component with at least two electrodes or a multipole component as generally known in the art. Each of the electrodes can be provided with a beam neighboring section or end section forming the free electrodes. This section is the section exposed to high voltages, i.e. more than 10 KV, and is intended to nevertheless work very reliable and precise with respect to the guidance and/or controlling of a beam of a charged particle beam in a microscope or lithographic apparatus. This neighboring section are positioned in the vicinity or close to a charged particle beam or even facing it. This bears the preferred advantage that high voltages can be generated by the electrodes or to the electrode component and they can withstand those high voltages. This assists in a better guidance and/or controlling of the charged beam, such as for compensating aberration etc. The beam neighboring section can have a surface configured to face the beam. This neighboring section or surface are fabricated with absolute dimensional tolerances less than a desired maximum absolute dimensional tolerance wherein the desired maximum absolute dimensional tolerance is based at least on a maximum voltage to be applied to the electrode. With such a precisely fabricated surface, a more precise and/or efficient field can be generated being able to control the charged particle beam more precisely and efficiently.

Provided are a plurality of embodiments, including, but not limited to, a device for generating efficient low and high average power output Gamma Rays via relativistic particle bombardment of element targets using an efficient particle injector and accelerator at low and high average power levels suitable for element transmutation and power generation with an option for efficient remediation of radioisotope release into any environment. The devices utilize diamond or diamond-like carbon materials and active cooling for improved performance.

Provided are a plurality of embodiments, including, but not limited to, a device for generating efficient low and high average power output Gamma Rays via relativistic particle bombardment of element targets using an efficient particle injector and accelerator at low and high average power levels suitable for element transmutation and power generation with an option for efficient remediation of radioisotope release into any environment. The devices utilize diamond or diamond-like carbon materials and active cooling for improved performance.

An anode structure for a magnetron provides for low eddy currents and efficient water cooling. The anode structure may be made by machining a bimetal blank including an out layer of a first metal and an inner layer of a second metal and formed by explosion bonding. The second metal has a resistivity lower than first metal and a thermal conductivity higher than the first metal. The machining may result in the anode structure with vanes each having a center (tip) portion made of the second metal and the rest made of the first metal. The machined anode structure may be coated with the second metal.