A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

An ion filter used for an electron multiplier includes an insulating substrate; a first conductive layer formed on one main surface of the substrate; and a second conductive layer formed on another main surface of the substrate. The ion filter has a plurality of through-holes formed along a thickness direction of the substrate. The one main surface of the substrate is disposed at a downstream side in a moving direction of electrons in a chamber of the electron multiplier and the other main surface of the substrate is disposed at an upstream side in the moving direction of electrons in the chamber of the electron multiplier. A first thickness of the first conductive layer formed on the one main surface of the substrate is thicker than a second thickness of the second conductive layer on the other main surface of the substrate.

An ion filter used for an electron multiplier includes an insulating substrate; a first conductive layer formed on one main surface of the substrate; and a second conductive layer formed on another main surface of the substrate. The ion filter has a plurality of through-holes formed along a thickness direction of the substrate. The one main surface of the substrate is disposed at a downstream side in a moving direction of electrons in a chamber of the electron multiplier and the other main surface of the substrate is disposed at an upstream side in the moving direction of electrons in the chamber of the electron multiplier. A first thickness of the first conductive layer formed on the one main surface of the substrate is thicker than a second thickness of the second conductive layer on the other main surface of the substrate.

An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.

An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.

Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein.

Some embodiments of vacuum electronics call for a grid that is fabricated in close proximity to an electrode, where, for example, the grid and electrode are separated by nanometers or microns. Methods and apparatus for fabricating a nanoscale vacuum grid and electrode structure are described herein.

In order to provide a mount of an anode disk to a rotating shaft that is suitable for increased thermal loads on the anode disk, a rotating anode assembly (10) is provided that comprises an anode disk (12), a rotating shaft (14), and an anode disk support (16). The anode disk is concentrically mounted to a rotating axis (18) of the rotating shaft via the anode disk support, and the anode disk support comprises a first support (20) with a first circular axial support surface (22) that is provided at the rotating shaft in a concentric manner with the rotating axis. Further, the anode disk support comprises a second support (24) with a second axial support surface (26) that is at least temporarily attached to the rotating shaft for urging the anode disk against the first support surface in an axial clamping direction. Still further, the first support is provided as a radially flexible support (28). Upon heating up of the anode disk during X-ray generation, and a thermal expansion of the anode disk, the radially flexible support bends (32) radially such that the first axial support surface at least partly follows the thermal expansion in a radial direction.