A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

Glass sealed gas discharge tubes. In some embodiments, a gas discharge tube (GDT) can include an insulator substrate having first and second sides and defining an opening. The GDT can further include a first electrode implemented to cover the opening on the first side of the insulator substrate, and a second electrode implemented to cover the opening on the second side of the insulator substrate. The GDT can further include a first glass seal implemented between the first electrode and the first side of the insulator substrate, and a second glass seal implemented between the second electrode and the second side of the insulator substrate, such that the first and second glass seals provide a hermetic seal for a chamber defined by the opening and the first and second electrodes.

A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.

A charged particle beam source that may include an emitter that has a tip for emitting charged particles; a socket; electrodes; a filament that is connected to the electrodes and to the emitter; electrodes for providing electrical signals to the filament; a support element that is connected to the emitter; and a support structure that comprises one or more interfaces for contacting only a part of the support element while supporting the support element.

A 4G magnetron is disclosed. The magnetron may include an anode, having a cylindrical member and anode vanes disposed within the cylindrical member which define resonant cavities therebetween, and a dispenser cathode, suitable for heating and located coaxially within said anode. The magnetron may operate in a temperature range of about 850-1050 C. The magnetron may include conductive cooling. The magnetron may comprise inventive anode and cathode structures. A method for preparing a plurality of magnetron tubes substantially simultaneously is further provided.

A 4G magnetron is disclosed. The magnetron may include an anode, having a cylindrical member and anode vanes disposed within the cylindrical member which define resonant cavities therebetween, and a dispenser cathode, suitable for heating and located coaxially within said anode. The magnetron may operate in a temperature range of about 850-1050 C. The magnetron may include conductive cooling. The magnetron may comprise inventive anode and cathode structures. A method for preparing a plurality of magnetron tubes substantially simultaneously is further provided.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A field emission cathode device and method for forming a field emission cathode device involve a cathode element having a field emission surface, and a gate electrode element disposed in spaced-apart relation to the field emission surface of the cathode element so as to define a gap therebetween, with the gate electrode element having a plurality of parallel grill members or a mesh structure laterally-extending between opposing anchored ends. A film element laterally co-extends and is engaged with the gate electrode element, with the film element being arranged to allowed electrons emitted from the field emission surface of the cathode element to pass therethrough, and to cooperate with the gate electrode element and the cathode element to form a substantially uniform electric field within the gap and about the field emission surface.

A field emission cathode device and method for forming a field emission cathode device involve a cathode element having a field emission surface, and a gate electrode element disposed in spaced-apart relation to the field emission surface of the cathode element so as to define a gap therebetween, with the gate electrode element having a plurality of parallel grill members or a mesh structure laterally-extending between opposing anchored ends. A film element laterally co-extends and is engaged with the gate electrode element, with the film element being arranged to allowed electrons emitted from the field emission surface of the cathode element to pass therethrough, and to cooperate with the gate electrode element and the cathode element to form a substantially uniform electric field within the gap and about the field emission surface.