A field emission neutralizer is provided. The field emission neutralizer comprises a bottom plate and at least one field emission cathode unit located on the bottom plate. The field emission cathode unit comprises a substrate, a shell located on the substrate, a mesh grid, a shielding layer insulated and spaced from the mesh grid, and at least one cathode emitter located inside the shell, and insulated and spaced from the mesh grid. The cathode emitter comprises two cathode electrode sheets and a graphitized carbon nanotube structure, the graphitized carbon nanotube structure comprises a first portion and a second portion, the first portion is clamped between the two cathode electrode sheets, and the second portion is exposed outside of the two cathode electrode sheets.

A field emission neutralizer is provided. The field emission neutralizer comprises a bottom plate and at least one field emission cathode unit located on the bottom plate. The field emission cathode unit comprises a substrate, a shell located on the substrate, a mesh grid, a shielding layer insulated and spaced from the mesh grid, and at least one cathode emitter located inside the shell, and insulated and spaced from the mesh grid. The cathode emitter comprises two cathode electrode sheets and a graphitized carbon nanotube structure, the graphitized carbon nanotube structure comprises a first portion and a second portion, the first portion is clamped between the two cathode electrode sheets, and the second portion is exposed outside of the two cathode electrode sheets.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a first film layer disposed on the electrode about a periphery of the electrode; and a second film layer disposed on the first film layer, the second film layer including a plurality of electrically conductive grid lines patterned therein that are supported only at the periphery of the electrode by the first film layer.

Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a first film layer disposed on the electrode about a periphery of the electrode; and a second film layer disposed on the first film layer, the second film layer including a plurality of electrically conductive grid lines patterned therein that are supported only at the periphery of the electrode by the first film layer.

Disclosed embodiments include vacuum electronic devices and methods of fabricating a vacuum electronic device. In a non-limiting embodiment, a vacuum electronic device includes an electrode that defines discrete support structures therein. A first film layer is disposed on the electrode about a periphery of the electrode and on the support structures. A second film layer is disposed on the first film layer. The second film layer includes electrically conductive grid lines patterned therein that are supported by and suspended between the support structures.

Disclosed embodiments include vacuum electronic devices and methods of fabricating a vacuum electronic device. In a non-limiting embodiment, a vacuum electronic device includes an electrode that defines discrete support structures therein. A first film layer is disposed on the electrode about a periphery of the electrode and on the support structures. A second film layer is disposed on the first film layer. The second film layer includes electrically conductive grid lines patterned therein that are supported by and suspended between the support structures.

An electron emission source includes a cathode electrode having a recess region formed in an upper portion thereof and the yarn emitter having a tip shape and provided in the recess region of the cathode electrode. The yarn emitter is spaced from an inner surface of the recess region of the cathode electrode.

An electron emission source includes a cathode electrode having a recess region formed in an upper portion thereof and the yarn emitter having a tip shape and provided in the recess region of the cathode electrode. The yarn emitter is spaced from an inner surface of the recess region of the cathode electrode.

A multi-beam triode for RF amplification has plurality of electron beams generated by a thermionic cathode, each electron beam travelling through an associated grid and to a common anode electrode. An input RF energy is coupled to a grid support which is electrically common to a control grid of each electron beam, and RF is coupled out of the gridanode gap, with suitable input RF matching cavities and output RF matching cavities provided.

A multi-beam triode for RF amplification has plurality of electron beams generated by a thermionic cathode, each electron beam travelling through an associated grid and to a common anode electrode. An input RF energy is coupled to a grid support which is electrically common to a control grid of each electron beam, and RF is coupled out of the gridanode gap, with suitable input RF matching cavities and output RF matching cavities provided.