Disclosed embodiments include vacuum electronics devices and methods of fabricating a vacuum electronics device. In a non-limiting embodiment, a vacuum electronics device includes: an electrode; a first film layer disposed on the electrode about a periphery of the electrode; and a second film layer disposed on the first film layer, the second film layer including a plurality of electrically conductive grid lines patterned therein that are supported only at the periphery of the electrode by the first film layer.

The present disclosure relates to devices and methods for enhancing the collection of charge carriers, such as electrons. Methods of manufacturing the devices are also disclosed. An electronic device can include a cathode, an anode, a gate electrode, and a focus electrode. The cathode can include a cathode substrate and an emitting region that is configured to emit an electron flow. The anode can include an anode substrate and a collection region that is configured to receive and/or absorb the electron flow. The gate electrode can be receptive to a first power source to produce a voltage in the gate electrode that is positively-biased with respect to the cathode. The focus electrode can be receptive to a second power source to produce a voltage in the focus electrode that is negatively-biased with respect to the gate electrode and/or the cathode.

The present disclosure relates to devices and methods for enhancing the collection of charge carriers, such as electrons. Methods of manufacturing the devices are also disclosed. An electronic device can include a cathode, an anode, a gate electrode, and a focus electrode. The cathode can include a cathode substrate and an emitting region that is configured to emit an electron flow. The anode can include an anode substrate and a collection region that is configured to receive and/or absorb the electron flow. The gate electrode can be receptive to a first power source to produce a voltage in the gate electrode that is positively-biased with respect to the cathode. The focus electrode can be receptive to a second power source to produce a voltage in the focus electrode that is negatively-biased with respect to the gate electrode and/or the cathode.

The present disclosure relates to devices and methods for enhancing the collection of charge carriers, such as electrons. Methods of manufacturing the devices are also disclosed. An electronic device can include a cathode, an anode, a gate electrode, and a focus electrode. The cathode can include a cathode substrate and an emitting region that is configured to emit an electron flow. The anode can include an anode substrate and a collection region that is configured to receive and/or absorb the electron flow. The gate electrode can be receptive to a first power source to produce a voltage in the gate electrode that is positively-biased with respect to the cathode. The focus electrode can be receptive to a second power source to produce a voltage in the focus electrode that is negatively-biased with respect to the gate electrode and/or the cathode.

The present disclosure relates to devices and methods for enhancing the collection of charge carriers, such as electrons. Methods of manufacturing the devices are also disclosed. An electronic device can include a cathode, an anode, a gate electrode, and a focus electrode. The cathode can include a cathode substrate and an emitting region that is configured to emit an electron flow. The anode can include an anode substrate and a collection region that is configured to receive and/or absorb the electron flow. The gate electrode can be receptive to a first power source to produce a voltage in the gate electrode that is positively-biased with respect to the cathode. The focus electrode can be receptive to a second power source to produce a voltage in the focus electrode that is negatively-biased with respect to the gate electrode and/or the cathode.

An electron emission source includes a cathode electrode having a recess region formed in an upper portion thereof and the yarn emitter having a tip shape and provided in the recess region of the cathode electrode. The yarn emitter is spaced from an inner surface of the recess region of the cathode electrode.

An electron emission source includes a cathode electrode having a recess region formed in an upper portion thereof and the yarn emitter having a tip shape and provided in the recess region of the cathode electrode. The yarn emitter is spaced from an inner surface of the recess region of the cathode electrode.

A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.

Disclosed are an electron emitting device using graphene and a method for manufacturing the same. The electron emitting device includes a metal holder having at least one slot, at least one emitter plate inserted into the slot to protrude from a first surface of the metal holder, and including an emitter supporting member and a graphene emitter attached onto the emitter supporting member, an insulation layer provided on the first surface of the metal holder, and a gate electrode provided on the insulation layer and including a gate supporting member and a graphene gate attached onto the gate supporting member.