A vertical vacuum transistor with a sharp tip structure, and associated fabrication process, is provided that is compatible with current vertical CMOS fabrication processing. The resulting vertical vacuum channel transistor advantageously provides improved operational characteristics including a higher operating frequency, a higher power output, and a higher operating temperature while at the same time providing a higher density of vertical transistor devices during the manufacturing process.

An annular cathode for a vacuum tube includes a central cylindrical support whose axis is that of the cathode; an outer peripheral electron emitter with annular section whose axis is that of the cathode, extending over the outer perimeter of the cathode; and a folded skirt, secured at an inner end to the central support, and secured, at its outer end, to a plurality of lugs; each lug being disposed in series with the folded skirt, and secured with the folded skirt and with the inner surface of the electron emitter.

An annular cathode for a vacuum tube includes a central cylindrical support whose axis is that of the cathode; an outer peripheral electron emitter with annular section whose axis is that of the cathode, extending over the outer perimeter of the cathode; and a folded skirt, secured at an inner end to the central support, and secured, at its outer end, to a plurality of lugs; each lug being disposed in series with the folded skirt, and secured with the folded skirt and with the inner surface of the electron emitter.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A device for controlling electron flow is provided. The device comprises a cathode, an elongate electrical conductor embedded in a diamond substrate, an anode, and a control electrode provided on the substrate surface for modifying the electric field in the region of the end of the conductor. A method of manufacturing the device is also provided.

A vertical vacuum transistor with a sharp tip structure, and associated fabrication process, is provided that is compatible with current vertical CMOS fabrication processing. The resulting vertical vacuum channel transistor advantageously provides improved operational characteristics including a higher operating frequency, a higher power output, and a higher operating temperature while at the same time providing a higher density of vertical transistor devices during the manufacturing process.

Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, comprising an external base forming at least a portion of the enclosure; an internal base within the enclosure; and at least one thermal dissipative strap assembly, comprising: an internal base thermal conductive base in contact with the internal base, an external base thermal conductive base in contact with the external base, and a flexible thermal dissipative strap coupling the internal base thermal conductive base to the external base thermal conductive base.

Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, comprising an external base forming at least a portion of the enclosure; an internal base within the enclosure; and at least one thermal dissipative strap assembly, comprising: an internal base thermal conductive base in contact with the internal base, an external base thermal conductive base in contact with the external base, and a flexible thermal dissipative strap coupling the internal base thermal conductive base to the external base thermal conductive base.

Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, the enclosure including an external base including an opening; an internal base within the enclosure; and an adjustable support assembly adjustably coupling the internal base to the external base and extending through the opening, the adjustable support assembly comprising: a threaded shaft extending along a longitudinal axis and coupled to the internal base; a threaded hole component threadedly engaged with the threaded shaft and coupled to the external base such that the threaded hole component is axially constrained in a direction along the longitudinal axis relative to the external base independent of the threaded shaft; and a flexible component coupled to the external base and the threaded shaft and sealing the opening.

Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, the enclosure including an external base including an opening; an internal base within the enclosure; and an adjustable support assembly adjustably coupling the internal base to the external base and extending through the opening, the adjustable support assembly comprising: a threaded shaft extending along a longitudinal axis and coupled to the internal base; a threaded hole component threadedly engaged with the threaded shaft and coupled to the external base such that the threaded hole component is axially constrained in a direction along the longitudinal axis relative to the external base independent of the threaded shaft; and a flexible component coupled to the external base and the threaded shaft and sealing the opening.