A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

A vacuum integrated electronic device has an anode region of conductive material; an insulating region on top of the anode region; a cavity extending through the insulating region and having a sidewall; and a cathode region. The cathode region has a tip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity. The cathode region is formed by tilted deposition, carried out at an angle of 30-60 with respect to a perpendicular to the surface of device.

The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.

The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.