An ion generator includes a high-voltage transformer having a secondary side that is not grounded; a discharge wire-pattern; an induction wire-pattern; a discharge electrode connected to a first terminal via the discharge wire-pattern, the first terminal being disposed on the secondary side of the high-voltage transformer; and an induction electrode connected to a second terminal via the induction wire-pattern, the second terminal being disposed on the secondary side of the high-voltage transformer. The first terminal has a first width. The discharge wire-pattern includes a discharge wide region having a second width greater than the first width. The discharge wide region and the induction wire-pattern at least partly overlap each other in plan view.

An ion generator includes a high-voltage transformer having a secondary side that is not grounded; a discharge wire-pattern; an induction wire-pattern; a discharge electrode connected to a first terminal via the discharge wire-pattern, the first terminal being disposed on the secondary side of the high-voltage transformer; and an induction electrode connected to a second terminal via the induction wire-pattern, the second terminal being disposed on the secondary side of the high-voltage transformer. The first terminal has a first width. The discharge wire-pattern includes a discharge wide region having a second width greater than the first width. The discharge wide region and the induction wire-pattern at least partly overlap each other in plan view.

An ion source is configured to form an ion beam and has an arc chamber enclosing an arc chamber environment. A reservoir apparatus can be configured as a repeller and provides a liquid metal to the arc chamber environment. A biasing power supply electrically biases the reservoir apparatus with respect to the arc chamber to vaporize the liquid metal to form a plasma in the arc chamber environment. The reservoir apparatus has a cup and cap defining a reservoir environment for the liquid metal that is fluidly coupled to the arc chamber environment by holes in the cap. Features extend from the cup into the reservoir and contact the liquid metal to feed the liquid metal toward the arc chamber environment by capillary action. A structure, surface area, roughness, and material modifies the capillary action. The feature can be an annular ring, rod, or tube extending into the liquid metal.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.

An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

An indirectly heated cathode ion source having an electrically isolated extraction plate is disclosed. By isolating the extraction plate, a different voltage can be applied to the extraction plate than to the body of the arc chamber. By applying a more positive voltage to the extraction plate, more efficient ion source operation with higher plasma density can be achieved. In this mode the plasma potential is increased, and the electrostatic sheath reduces losses of electrons to the chamber walls. By applying a more negative voltage, an ion rich sheath adjacent to the extraction aperture can be created. In this mode, conditioning and cleaning of the extraction plate is achieved via ion bombardment. Further, in certain embodiments, the voltage applied to the extraction plate can be pulsed to allow ion extraction and cleaning to occur simultaneously.

An apparatus for measuring ion beam current values without disturbing the state of ionization of an ion source includes a high-voltage circuit for applying a voltage between an anode and at least one cathode of an ion source based on a voltage condition and supplying its output current to the anode; a gas flow rate adjusting mechanism for adjusting the flow rate of a gas being an ion source material for generating ions and to be admitted into the ion source; a memory in which there is stored information representing a relationship between the flow rate of the gas and the value of an extraction current flowing through an extraction electrode; and an arithmetic processor for finding the extraction current corresponding to the flow rate of the gas based on the information stored in the memory and subtracting the value of the extraction current from the value of the output current supplied to the anode by the high-voltage circuit to compute the electrical current value of the ion beam.

A deposition apparatus, which forms a film on a substrate, includes a rotation unit configured to rotate a target about a rotating axis; a striker configured to generate an arc discharge; a driving unit configured to drive the striker so as to make a close state which the striker closes to a side surface around the rotating axis of the target to generate the arc discharge; and a control unit configured to control rotation of the target by the rotation unit so as to change a facing position on the side surface of the target facing the striker in the close state.

An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.