An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.

An electron gun comprising a cathode having an electron emitting surface and whose planar shape is circular, a heater to increase the temperature of the cathode, and an anode to apply a positive electric potential relative to the cathode to extract electrons in a predetermined direction is provided. The cathode comprises a through hole at a central portion thereof along a central axis of the cathode, and either the cathode comprises a no-emitting layer at at least one of an opening edge on the electron emitting surface side of the through hole and an inner surface of the through hole, or the opening edge on the electron emitting surface side of the through hole is a chamfered C surface or a chamfered R surface.

An electron gun comprising a cathode having an electron emitting surface and whose planar shape is circular, a heater to increase the temperature of the cathode, and an anode to apply a positive electric potential relative to the cathode to extract electrons in a predetermined direction is provided. The cathode comprises a through hole at a central portion thereof along a central axis of the cathode, and either the cathode comprises a no-emitting layer at at least one of an opening edge on the electron emitting surface side of the through hole and an inner surface of the through hole, or the opening edge on the electron emitting surface side of the through hole is a chamfered C surface or a chamfered R surface.

Aspects of the present disclosure describe an atomic oven including a cathode, an anode that comprises a source material, and a power supply that provides a voltage between the cathode and the anode, wherein applying the voltage causes multiple electrons from the cathode to ablate the source material from the anode or locally heat the anode to cause source material to evaporate from the anode and, in both case, to produce a stream of ablated or evaporated particles that passes through an opening in the cathode.

Aspects of the present disclosure describe an atomic oven including a cathode, an anode that comprises a source material, and a power supply that provides a voltage between the cathode and the anode, wherein applying the voltage causes multiple electrons from the cathode to ablate the source material from the anode or locally heat the anode to cause source material to evaporate from the anode and, in both case, to produce a stream of ablated or evaporated particles that passes through an opening in the cathode.

Provided is a field emission device including a cathode electrode and an anode electrode, which are spaced apart from each other, an emitter disposed on the cathode electrode, a gate electrode disposed between the cathode electrode and the anode electrode and including a gate opening that overlaps the emitter, and a plurality of alignment electrodes disposed between the gate electrode and the cathode electrode. Here, the alignment electrodes surround a side surface of the emitter.

Provided is a field emission device including a cathode electrode and an anode electrode, which are spaced apart from each other, an emitter disposed on the cathode electrode, a gate electrode disposed between the cathode electrode and the anode electrode and including a gate opening that overlaps the emitter, and a plurality of alignment electrodes disposed between the gate electrode and the cathode electrode. Here, the alignment electrodes surround a side surface of the emitter.

Systems and methods for providing a heaterless hollow cathode for use in electric propulsion devices is presented. According to one aspect the cathode includes a thermionic emitter having a constricted upstream inlet compared to a downstream outlet of the emitter. The emitter is arranged downstream a hollow cathode tube. Constriction of the upstream inlet is provided by an inner cylindrical hollow space at an upstream region of the emitter having a diameter that is smaller compared to a diameter of an inner cylindrical hollow space at a downstream region of the emitter. A hollow transition region having a varying diameter connects the upstream region to the downstream region. According to another aspect, a ratio of the diameters of the two cylindrical hollow spaces reduces penetration of electric field, and therefore of electric discharge, into the upstream region of the emitter during operation.

Systems and methods for providing a heaterless hollow cathode for use in electric propulsion devices is presented. According to one aspect the cathode includes a thermionic emitter having a constricted upstream inlet compared to a downstream outlet of the emitter. The emitter is arranged downstream a hollow cathode tube. Constriction of the upstream inlet is provided by an inner cylindrical hollow space at an upstream region of the emitter having a diameter that is smaller compared to a diameter of an inner cylindrical hollow space at a downstream region of the emitter. A hollow transition region having a varying diameter connects the upstream region to the downstream region. According to another aspect, a ratio of the diameters of the two cylindrical hollow spaces reduces penetration of electric field, and therefore of electric discharge, into the upstream region of the emitter during operation.

An electron gun comprising a cathode having an electron emitting surface and whose planar shape is circular, a heater to increase the temperature of the cathode, and an anode to apply a positive electric potential relative to the cathode to extract electrons in a predetermined direction is provided. The cathode comprises a through hole at a central portion thereof along a central axis of the cathode, and either the cathode comprises a no-emitting layer at at least one of an opening edge on the electron emitting surface side of the through hole and an inner surface of the through hole, or the opening edge on the electron emitting surface side of the through hole is a chamfered C surface or a chamfered R surface.