A microfluidic chip and a detection method using the microfluidic chip. The microfluidic chip includes: at least one micro-chamber; a photocathode located on a side of the at least one micro-chamber and configured to receive photons emitted from the micro-chamber to generate electrons; a micro-channel plate located on a side of the photocathode away from the micro-chamber and configured to multiply the electrons generated by the photocathode; and a first electrode located on a side of the micro-channel plate away from the photocathode; the micro-channel plate includes a plurality of micro-channels extending substantially in a thickness direction of the micro-channel plate, a secondary electron emission layer is provided on an inner wall of each of the plurality of micro-channels, and the first electrode is configured to detect the electrons that are multiplied by the micro-channel plate.

A microfluidic chip and a detection method using the microfluidic chip. The microfluidic chip includes: at least one micro-chamber; a photocathode located on a side of the at least one micro-chamber and configured to receive photons emitted from the micro-chamber to generate electrons; a micro-channel plate located on a side of the photocathode away from the micro-chamber and configured to multiply the electrons generated by the photocathode; and a first electrode located on a side of the micro-channel plate away from the photocathode; the micro-channel plate includes a plurality of micro-channels extending substantially in a thickness direction of the micro-channel plate, a secondary electron emission layer is provided on an inner wall of each of the plurality of micro-channels, and the first electrode is configured to detect the electrons that are multiplied by the micro-channel plate.

An image intensifier sensor for acquiring, amplifying and displaying images and including a vacuum envelope, the image intensifier sensor including a photocathode arranged for releasing photoelectrons into the vacuum envelope upon electromagnetic radiation acquired from the images which impinges the photocathode, an anode, spaced apart from and in facing relationship with the photocathode, arranged for receiving the photoelectrons and converting the photoelectrons for displaying the images on the basis thereof, and a power supply unit for providing power to the image intensifier sensor, wherein the image intensifier sensor further includes potting material, wherein the potting material comprises a foam compound.

An image intensifier sensor for acquiring, amplifying and displaying images and including a vacuum envelope, the image intensifier sensor including a photocathode arranged for releasing photoelectrons into the vacuum envelope upon electromagnetic radiation acquired from the images which impinges the photocathode, an anode, spaced apart from and in facing relationship with the photocathode, arranged for receiving the photoelectrons and converting the photoelectrons for displaying the images on the basis thereof, and a power supply unit for providing power to the image intensifier sensor, wherein the image intensifier sensor further includes potting material, wherein the potting material comprises a foam compound.

A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20 C. to 200 C.

A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20 C. to 200 C.

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

An image sensor has a photocathode window assembly, an anode assembly, and a malleable metal seal. The photocathode window assembly has a photocathode layer. The anode assembly includes a silicon substrate that has an electron sensitive surface. The malleable metal seal bonds the photocathode window assembly and the silicon substrate to each other. A vacuum gap separates the photocathode layer from the electron sensitive surface. A first electrical connection and a second electrical connection are for a voltage bias of the photocathode layer relative to the electron sensitive surface.

An input coupler for an accelerating cavity includes a cylindrical external conductor; a cylindrical internal conductor arranged coaxially with the external conductor, inside of which a heating medium circulates; a plate provided between the inner surface of the external conductor and the outer surface of the internal conductor; a cooling part for cooling the plate from the external conductor side to the freezing point of water or lower; and a heat insulating part provided on the part at which the internal conductor and the plate are connected, the heat insulating part having lower thermal conductivity than that of the internal conductor. The plate is connected to the internal conductor via the heat insulating part.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.