A star camera system that includes an optical system configured to focus radiation from a star to be imaged onto a collector that is in the form of an electron bombarded active pixel sensor (EBAPS) configured to provide high gain. The EBAPS comprising a photocathode disposed in a vacuum is configured to release electrons into the vacuum when exposed to radiation focused thereon by the optical system. The EBAPS includes an active pixel sensor anode disposed distant from the photocathode in the vacuum. An electric field is generated by a voltage source to direct the electrons from the photocathode to the active pixel sensor anode. Furthermore, the collector is mounted on a translation device configured to move the collector relative to the optical system by a predetermined amount of less than pixel size in the focal plane of the optical system to increase image resolution of a plurality of images.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

An image intensifier and a method of fabrication are disclosed. The image intensifier contains a photocathode assembly (120) including a vacuum window to generate photoelectrons in response to light, a vacuum package (110) and an anode assembly (130) to receive the photoelectrons. The anode assembly is mounted to the vacuum package via a compliant, springy, support structure (160). The anode additionally includes one or more insulating spacers (140) on the surface facing the photocathode so as to precisely index the position of the anode assembly with respect to the photocathode surface. The photocathode and vacuum window assembly is pressed into the vacuum package to generate a sealed leak tight vacuum envelope. During the photocathode assembly to vacuum package assembly pressing operation, the inner surface of the photocathode assembly contacts the insulating spacer/spacers of the anode assembly, thereby compressing the compliant support structure. This structure and assembly method result in a precisely indexed photocathode to anode assembly sealed image intensifier.

In a photoelectric conversion device, the meta-surface includes a first antenna portion, a first bias portion, a second antenna portion, and a second bias portion. The first antenna portion extends in a first direction and emits an electron in response to incidence of the electromagnetic wave. The first bias portion faces the first antenna portion and is configured to generate an electric field having a component in the first direction between the first bias portion and the first antenna portion. The second antenna portion extends in a second direction intersecting the first direction and emits an electron in response to incidence of the electromagnetic wave. The second bias portion faces the second antenna portion and is configured to generate an electric field having a component in the second direction between the second bias portion and the second antenna portion.

In a photoelectric conversion device, the meta-surface includes a first antenna portion, a first bias portion, a second antenna portion, and a second bias portion. The first antenna portion extends in a first direction and emits an electron in response to incidence of the electromagnetic wave. The first bias portion faces the first antenna portion and is configured to generate an electric field having a component in the first direction between the first bias portion and the first antenna portion. The second antenna portion extends in a second direction intersecting the first direction and emits an electron in response to incidence of the electromagnetic wave. The second bias portion faces the second antenna portion and is configured to generate an electric field having a component in the second direction between the second bias portion and the second antenna portion.