A self-cleaning ion generator device includes a first portion with a base portion that extends to an outer edge and a first pair and a second pair of opposed sidewalls extending upwardly from the outer edge and intersect at corners, forming a cavity therein. A second portion includes a base portion that extends to an outer edge selectively secured to the first portion forming a housing. At least one ion emitting device extending from the housing, and at least one cleaning apparatus for cleaning the at least one ion emitting device.

A self-cleaning ion generator device includes a first portion with a base portion that extends to an outer edge and a first pair and a second pair of opposed sidewalls extending upwardly from the outer edge and intersect at corners, forming a cavity therein. A second portion includes a base portion that extends to an outer edge selectively secured to the first portion forming a housing. At least one ion emitting device extending from the housing, and at least one cleaning apparatus for cleaning the at least one ion emitting device.

Systems and methods for generating nitric oxide are disclosed. A nitic oxide (NO) generation system includes at least one pair of electrodes configured to generate a product gas containing NO from a flow of a reactant gas; and a controller configured to regulate the amount of nitric oxide in the product gas produced by the at least one pair of electrodes by utilizing duty cycle values of plasma pulses selected from a plurality of discrete duty cycles to produce a target rate of NO production based on an average of discrete production rates associated with each of the plurality of discrete duty cycles.

Systems and methods for generating nitric oxide are disclosed. A nitic oxide (NO) generation system includes at least one pair of electrodes configured to generate a product gas containing NO from a flow of a reactant gas; and a controller configured to regulate the amount of nitric oxide in the product gas produced by the at least one pair of electrodes by utilizing duty cycle values of plasma pulses selected from a plurality of discrete duty cycles to produce a target rate of NO production based on an average of discrete production rates associated with each of the plurality of discrete duty cycles.

A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

A charged particle beam device according to the present invention comprises a charged particle source that emits charged particles, a detection circuit that detects electrons which are generated by a sample as a result of irradiation with the charged particles, and a power storage device (107_VHD) that holds direct voltage, and comprises a charge circuit (107_CHG) that charges the power storage device with supplied voltage, and a control circuit (107_CTL) that controls the charge circuit such that charging is carried out in a period in which no sample is measured, wherein the direct voltage held by the power storage device (107_VHD) is used as operating voltage.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

A charged-particle source for generating a charged-particle comprises a sequence of electrodes, including an emitter electrode with an emitter surface, a counter electrode held at an electrostatic voltage with respect to the emitter electrode at a sign opposite to that of the electrically charged particles, and one or more adjustment electrodes surrounding the source space between the emitter electrode and the counter electrode. These electrodes have a basic overall rotational symmetry along a central axis, with the exception of one or more steering electrodes which is an electrode which interrupts the radial axial-symmetry of the electric potential of the source, for instance tilted or shifted to an eccentric position or orientation, configured to force unintended, secondary charged particles away from the emission surface.

A charged-particle source for generating a charged-particle comprises a sequence of electrodes, including an emitter electrode with an emitter surface, a counter electrode held at an electrostatic voltage with respect to the emitter electrode at a sign opposite to that of the electrically charged particles, and one or more adjustment electrodes surrounding the source space between the emitter electrode and the counter electrode. These electrodes have a basic overall rotational symmetry along a central axis, with the exception of one or more steering electrodes which is an electrode which interrupts the radial axial-symmetry of the electric potential of the source, for instance tilted or shifted to an eccentric position or orientation, configured to force unintended, secondary charged particles away from the emission surface.