A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.

A method of performing x-ray spectroscopy surface material analysis of a region of interest of a sample with an evaluation system that includes a scanning electron microscope (SEM) column, an x-ray detector and an x-ray polarizer, comprising: positioning a sample within a field of view of the scanning electron microscope; generating an electron beam having a landing energy about equal to an ionization energy of the materials within the region of interest of the sample; scanning the region of interest with the electron beam set to collide with the sample thereby generating x-rays emitted from near a surface of the sample, the x-rays including characteristic x-rays and Bremsstrahlung radiation; and detecting x-rays generated while the region of interest is scanned by the electron after the x-rays pass through the x-ray polarizer that blocks a higher percentage of the Bremsstrahlung radiation than the characteristic x-rays.

A method of performing x-ray spectroscopy surface material analysis of a region of interest of a sample with an evaluation system that includes a scanning electron microscope (SEM) column, an x-ray detector and an x-ray polarizer, comprising: positioning a sample within a field of view of the scanning electron microscope; generating an electron beam having a landing energy about equal to an ionization energy of the materials within the region of interest of the sample; scanning the region of interest with the electron beam set to collide with the sample thereby generating x-rays emitted from near a surface of the sample, the x-rays including characteristic x-rays and Bremsstrahlung radiation; and detecting x-rays generated while the region of interest is scanned by the electron after the x-rays pass through the x-ray polarizer that blocks a higher percentage of the Bremsstrahlung radiation than the characteristic x-rays.

Systems and methods for generating nitric oxide are disclosed. A nitric oxide (NO) generation system includes at least one pair of electrodes configured to generate a product gas containing NO from a flow of a reactant gas; and a controller configured to regulate the amount of nitric oxide in the product gas produced by the at least one pair of electrodes by utilizing duty cycle values of plasma pulses selected from a plurality of discrete duty cycles to produce a target rate of NO production based on an average of discrete production rates associated with each of the plurality of discrete duty cycles.

Systems and methods for generating nitric oxide are disclosed. A nitric oxide (NO) generation system includes at least one pair of electrodes configured to generate a product gas containing NO from a flow of a reactant gas; and a controller configured to regulate the amount of nitric oxide in the product gas produced by the at least one pair of electrodes by utilizing duty cycle values of plasma pulses selected from a plurality of discrete duty cycles to produce a target rate of NO production based on an average of discrete production rates associated with each of the plurality of discrete duty cycles.

A particle beam system, such as a multi-beam particle microscope, includes a multi-beam deflection device and a beam stop. The multi-beam deflection device is arranged in the particle-optical beam path downstream of the multi-beam generator and upstream of the beam switch of the particle beam system. The multi-beam deflection device serves collectively blanks a multiplicity of charged individual particle beams. These impinge on a beam stop, which is arranged in the particle-optical beam path level with a site at which a particle beam diameter is reduced or is at a minimum. By way of example, such sites are the cross-over plane of the individual particle beams or an intermediate image plane. Associated methods for operating the particle beam system and associated computer program products are disclosed.

Methods, systems, and devices for electron beam probing techniques and related structures are described to enable inline testing of memory device structures. Conductive loops may be formed, some of which may be grounded and others of which may be electrically floating in accordance with a predetermined pattern. The loops may be scanned with an electron beam and image analysis techniques may be used to generate an optical pattern. The generated optical pattern may be compared to an expected optical pattern, which may be based on the predetermined pattern of grounded and floating loops. An electrical defect may be determined based on any difference between the generated optical pattern and the expected optical pattern. For example, if a second loop appears as having a brightness corresponding to a grounded loop, this may indicate that an unintended short exists. Fabrication techniques may be adjusted for subsequent devices to correct identified defects.