An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10.sup.−6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

According to one aspect of the present invention, an electron beam irradiation apparatus includes a photoelectric surface configured to receive irradiation of excitation light on a side of a front surface, and generate electron beams from a side of a back surface; a blanking aperture array mechanism provided with passage holes corresponding to the electron beams and configured to perform deflection control on each of the plurality of electron beams passing through the passage holes; and an adjustment mechanism configured to adjust at least one of an orbit of transmitted light that passes through at least one of arrangement objects including the photoelectric surface, the blanking aperture array mechanism, and the limit aperture substrate up to the stage and reaches the stage, among an irradiated excitation light, and an orbit of the electron beams, wherein the arrangement objects shield at least a part of the transmitted light.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

Systems and methods of observing a sample using an electron beam apparatus are disclosed. The electron beam apparatus comprises an electron source configured to generate a primary electron beam along a primary optical axis, and a first electron detector having a first detection layer substantially parallel to the primary optical axis and configured to detect a first portion of a plurality of signal electrons generated from a probe spot on a sample. The method may comprise generating a plurality of signal electrons and detecting the signal electrons using the first electron detector substantially parallel to the primary optical axis of the primary electron beam. A method of configuring an electrostatic element or a magnetic element to detect backscattered electrons may include disposing an electron detector on an inner surface of the electrostatic or magnetic element and depositing a conducting layer on the inner surface of the electron detector.

Provided is a charged particle beam system capable of preventing the data acquisition time from increasing. A control method for the system is also provided. The charged particle beam system includes: a beam blanker for blanking a charged particle beam; a sample stage on which a sample is tiltably held and thus can assume a tilt angle; a blanking controller for controlling the blanking of the charged particle beam and causing a pulsed beam having a duty ratio to be directed at the sample; and a tilt controller for controlling the tilt angle of the sample. The blanking controller sets the duty ratio of the pulsed beam based on the tilt angle of the sample.

A writing apparatus of the embodiments of the present invention is a writing apparatus that irradiates a predetermined position on an irradiation target with multiple charged particle beams to write a predetermined pattern on the irradiation target, the apparatus comprising: a beam generation mechanism configured to generate multiple charged particle beams; a blanking aperture mechanism configured to perform blanking control of the generated multiple charged particle beams; a stage configured to have the irradiation target mounted thereon and to be movable; and a controller configured to control the writing apparatus, wherein the controller controls the blanking aperture mechanism and the stage to move the stage in an in-plane direction of a surface of the irradiation target during a blanking period in preparatory phase for writing.

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

The present disclosure discloses a transmission electron microscope in-situ chip and a preparation method thereof. The transmission electron microscope in-situ chip includes a transmission electron microscope high-resolution in-situ gas phase heating chip, a transmission electron microscope high-resolution in-situ liquid phase heating chip and a transmission electron microscope in-situ electrothermal coupling chip. The transmission electron microscope high-resolution in-situ gas phase heating chip and the transmission electron microscope high-resolution in-situ liquid phase heating chip are respectively suitable for gas samples and liquid samples, and the transmission electron microscope in-situ electrothermal coupling chip realizes the multi-functional embodiment of electrothermal coupling. The three transmission electron microscope in-situ chips have the advantages of high resolution and low sample drift rate.