An ion pump and a charged particle beam device each includes two opposite flat-plate cathodes, an anode with a cylindrical shape having openings that face the respective flat-plate cathodes, a voltage application unit configured to apply a potential higher than potentials of the flat-plate cathodes to the anode, a magnetic field application unit configured to apply a magnetic field along an axial direction of the cylindrical shape of the anode, and a cathode bar arranged within the anode. The surface of the cathode bar is formed with a material that forms a non-evaporative getter alloy film on the anode or the flat-plate cathodes.

An ion pump and a charged particle beam device each includes two opposite flat-plate cathodes, an anode with a cylindrical shape having openings that face the respective flat-plate cathodes, a voltage application unit configured to apply a potential higher than potentials of the flat-plate cathodes to the anode, a magnetic field application unit configured to apply a magnetic field along an axial direction of the cylindrical shape of the anode, and a cathode bar arranged within the anode. The surface of the cathode bar is formed with a material that forms a non-evaporative getter alloy film on the anode or the flat-plate cathodes.

A charged-particle microscope, comprising a vacuum chamber in which are provided: A specimen holder for holding a specimen in an irradiation position; A particle-optical column, for producing a charged particle beam and directing it so as to irradiate the specimen; A detector, for detecting a flux of radiation emanating from the specimen in response to irradiation by said beam,
wherein: Said vacuum chamber comprises an in situ magnetron sputter deposition module, comprising a magnetron sputter source for producing a vapor stream of target material; A stage is configured to move a sample comprising at least part of said specimen between said irradiation position and a separate deposition position at said deposition module; Said deposition module is configured to deposit a layer of said target material onto said sample when held at said deposition position.

A charged-particle microscope, comprising a vacuum chamber in which are provided: A specimen holder for holding a specimen in an irradiation position; A particle-optical column, for producing a charged particle beam and directing it so as to irradiate the specimen; A detector, for detecting a flux of radiation emanating from the specimen in response to irradiation by said beam,
wherein: Said vacuum chamber comprises an in situ magnetron sputter deposition module, comprising a magnetron sputter source for producing a vapor stream of target material; A stage is configured to move a sample comprising at least part of said specimen between said irradiation position and a separate deposition position at said deposition module; Said deposition module is configured to deposit a layer of said target material onto said sample when held at said deposition position.

Improved is the reliability of sample analysis performed using a charged particle beam apparatus.

The charged particle beam apparatus includes region setting means for setting an irradiation region for irradiating a sample with an electron beam and an irradiation prohibited region for prohibiting the irradiation of the sample with the electron beam using a low-magnification image of the sample captured under low vacuum. In addition, the charged particle beam apparatus includes captured image acquisition means for selectively irradiating the irradiation region with the electron beam with the inside of a sample chamber under high-vacuum and acquiring a high-vacuum SEM image of the irradiation region based on the secondary or backscattered electrons emitted from the irradiation region.

Improved is the reliability of sample analysis performed using a charged particle beam apparatus.

The charged particle beam apparatus includes region setting means for setting an irradiation region for irradiating a sample with an electron beam and an irradiation prohibited region for prohibiting the irradiation of the sample with the electron beam using a low-magnification image of the sample captured under low vacuum. In addition, the charged particle beam apparatus includes captured image acquisition means for selectively irradiating the irradiation region with the electron beam with the inside of a sample chamber under high-vacuum and acquiring a high-vacuum SEM image of the irradiation region based on the secondary or backscattered electrons emitted from the irradiation region.

The present invention makes it possible to analyze trace carbon in a sample without the effects of contamination. In an electron probe microanalyzer, a liquid nitrogen trap and a plasma or oxygen radical generator are jointly used as a means for suppressing contamination, and two or more carbon detection units for detecting characteristic x-rays of carbon in the sample are provided.

The present invention makes it possible to analyze trace carbon in a sample without the effects of contamination. In an electron probe microanalyzer, a liquid nitrogen trap and a plasma or oxygen radical generator are jointly used as a means for suppressing contamination, and two or more carbon detection units for detecting characteristic x-rays of carbon in the sample are provided.

A differential pumping apparatus for creating a high vacuum inside a processing space includes a displacement drive unit configured to move a substrate to be processed or a head, to adjust parallelism and distance between a surface to be processed and a surface of the head. Gap measurement devices are placed at three or more locations along the periphery of the surface of the head to provide distance information. A gap control unit is configured to control the displacement drive unit in response to the distance information between the surface to be processed and the surface adapted to face the surface to be processed, so that the surface to be processed and the surface adapted to face the surface to be processed are parallel.

A differential pumping apparatus for creating a high vacuum inside a processing space includes a displacement drive unit configured to move a substrate to be processed or a head, to adjust parallelism and distance between a surface to be processed and a surface of the head. Gap measurement devices are placed at three or more locations along the periphery of the surface of the head to provide distance information. A gap control unit is configured to control the displacement drive unit in response to the distance information between the surface to be processed and the surface adapted to face the surface to be processed, so that the surface to be processed and the surface adapted to face the surface to be processed are parallel.