A thin film liquid cell suitable for transmission electron microscopy at room temperature is fabricated as follows. A thin film floating on a liquid is prepared. A droplet of the liquid with the thin film floating thereon is transferred to a support by means of a loop. The loop carries the droplet and the droplet carries the thin film during this transfer. Sufficient liquid from the droplet on the support is removed to form the thin film liquid cell.

A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

A method of scanning a substrate includes immobilizing a substrate on a substrate holder within a processing chamber and performing a pass of a parallel raster pattern by synchronously driving a first rotary drive and a second rotary drive to move the substrate relative to a processing apparatus focused on a localized spot on the substrate, the first rotary drive being coupled to a proximal end of a pendulum arm and the second rotary drive being mounted at a distal end of the pendulum arm and to the substrate holder. Driving the first rotary drive during the pass includes moving the pendulum arm in a first arc motion for a first portion of the pass while the localized spot is on the substrate, and then moving the pendulum arm in an opposite second arc motion for a second portion of the pass while the localized spot is on the substrate.

A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region

A method of depositing material over a sample in a deposition region of the sample with a charged particle beam column, the method comprising: positioning a sample within a vacuum chamber such that the deposition region is under a field of view of the charged particle beam column; cooling the deposition region by contacting the sample with a cyro-nanomanipulator tool in an area adjacent to the deposition region; injecting a deposition precursor gas into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with a charged particle beam column and focusing the charged particle beam on the sample; and scanning the focused electron beam across the localized region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region

A technique that enables automatic focus adjustment even for a sample having regions with different heights is proposed. A charged particle beam device according to the disclosure includes: a sample holder configured to hold a sample; a sample stage configured to move the sample; a charged particle gun and a charged particle beam column configured to irradiate the sample with a charged particle beam; an objective lens configured to perform focus adjustment by changing an intensity of a focusing effect on the charged particle beam; a detector configured to detect electrons from the sample and output a signal forming an electron image; an optical imaging device configured to capture an optical image of the sample; and a control device configured to calculate height information of the sample based on the optical image obtained by imaging the sample by the optical imaging device, and automatically set a focus adjustment value of an observation site based on the height information (see FIG. 5).

A technique that enables automatic focus adjustment even for a sample having regions with different heights is proposed. A charged particle beam device according to the disclosure includes: a sample holder configured to hold a sample; a sample stage configured to move the sample; a charged particle gun and a charged particle beam column configured to irradiate the sample with a charged particle beam; an objective lens configured to perform focus adjustment by changing an intensity of a focusing effect on the charged particle beam; a detector configured to detect electrons from the sample and output a signal forming an electron image; an optical imaging device configured to capture an optical image of the sample; and a control device configured to calculate height information of the sample based on the optical image obtained by imaging the sample by the optical imaging device, and automatically set a focus adjustment value of an observation site based on the height information (see FIG. 5).

An electron microscope includes a stage on which a sample is capable of being placed, a beam generator, a detector, a display, and a controller. The beam generator emits a charged particle beam with which the sample is irradiated. The detector detects a secondary electron or an electron generated from the sample by irradiation with the charged particle beam. The display displays an image of the sample based on a signal from the detector. The controller executes a first irradiation process of specifying a position of a hole bottom by scanning the sample with the charged particle beam when capturing an image of the hole bottom of a hole provided in the sample, and executes a second irradiation process of imaging a shape of the hole bottom by irradiating the hole bottom with the charged particle beam via the hole.

An electron microscope includes a stage on which a sample is capable of being placed, a beam generator, a detector, a display, and a controller. The beam generator emits a charged particle beam with which the sample is irradiated. The detector detects a secondary electron or an electron generated from the sample by irradiation with the charged particle beam. The display displays an image of the sample based on a signal from the detector. The controller executes a first irradiation process of specifying a position of a hole bottom by scanning the sample with the charged particle beam when capturing an image of the hole bottom of a hole provided in the sample, and executes a second irradiation process of imaging a shape of the hole bottom by irradiating the hole bottom with the charged particle beam via the hole.