Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

Apparatus include a plurality of electrode arrangements spaced apart from each other opposite an ion propagation axis and defining an ion transfer channel that extends along the ion propagation axis that tapers between an input end that is situated to receive ions and an output end that is situated to couple the received ions to an input end of an ion guide. Methods include positioning a plurality of electrode arrangements at oblique angles opposite an ion propagation axis so as to form a ion transfer channel that tapers between an input end and an output end, and coupling the output end of the ion transfer channel to an input end of an ion optical element so as to direct ions in the ion transfer channel into the ion optical element. Related systems are also disclosed.

An electron beam application apparatus includes: an optical system configured to irradiate a sample with excitation light; an electron optical system configured to project, onto a camera, a photoelectron image formed by photoelectrons emitted from the sample irradiated with the excitation light; and a control unit. The optical system includes a light source configured to generate the excitation light and a pattern forming unit. The excitation light forms an optical pattern on a surface of the sample when the pattern forming unit is turned on, and the excitation light is emitted to the sample without forming the optical pattern on the surface of the sample when the pattern forming unit is turned off. The control unit adjusts the electron optical system based on feature data of a bright and dark pattern formed by the optical pattern in the photoelectron image obtained by turning on the pattern forming unit.

An electron beam application apparatus includes: an optical system configured to irradiate a sample with excitation light; an electron optical system configured to project, onto a camera, a photoelectron image formed by photoelectrons emitted from the sample irradiated with the excitation light; and a control unit. The optical system includes a light source configured to generate the excitation light and a pattern forming unit. The excitation light forms an optical pattern on a surface of the sample when the pattern forming unit is turned on, and the excitation light is emitted to the sample without forming the optical pattern on the surface of the sample when the pattern forming unit is turned off. The control unit adjusts the electron optical system based on feature data of a bright and dark pattern formed by the optical pattern in the photoelectron image obtained by turning on the pattern forming unit.

The purpose of the present invention is to provide a height measurement device with which, even when the height of a sample surface varies considerably, it is possible, with a relatively simple configuration, to perform height measurement with high accuracy at various heights. In order to achieve the abovementioned purpose, proposed is an optical height measurement device characterized by being provided with: a stage for retaining a sample; a stage driving unit for adjusting the stage at different heights; a projection optical system for projecting light onto the sample; a detection optical system for receiving light reflected from the sample; and a processing unit for measuring the height of the sample on the basis of a signal outputted from the detection optical system, wherein the projection optical system is provided with a light source that emits light, and an optical path dividing element for branching the optical path of the light emitted from the light source, and the detection optical system is provided with a sensor for receiving light reflected from the sample, and an element for adjusting the light path of the light reflected from the sample in the direction of the sensor prior to reception of the light by the sensor.

A particle beam system includes a multi-source system. The multi-source system comprises an electron emitter array as a particle multi-source. The inhomogeneous emission characteristics of the various emitters in this multi-source system are correctable, or pre-correctable for subsequent particle-optical imaging, via particle-optical components that are producible via MEMS technology. A beam current of the individual particle beams is adjustable in the multi-source system.

A particle beam system includes a multi-source system. The multi-source system comprises an electron emitter array as a particle multi-source. The inhomogeneous emission characteristics of the various emitters in this multi-source system are correctable, or pre-correctable for subsequent particle-optical imaging, via particle-optical components that are producible via MEMS technology. A beam current of the individual particle beams is adjustable in the multi-source system.

The invention relates to method of milling and imaging a sample. The method comprises the step of providing an imaging system, as well as a milling beam source. The method comprises the steps of milling, using a milling beam from said milling beam source, a sample to remove a layer of the sample; and imaging, using said imaging system, an exposed surface of the sample. As defined herein, the method further comprises the step of determining a relative position of said sample, and using said determined relative position of said sample in said milling step for positioning said sample relative to said milling beam. The relative position of said sample can be a working distance with respect to the imaging system, which can be determined by means of an autofocus procedure.

The invention relates to method of milling and imaging a sample. The method comprises the step of providing an imaging system, as well as a milling beam source. The method comprises the steps of milling, using a milling beam from said milling beam source, a sample to remove a layer of the sample; and imaging, using said imaging system, an exposed surface of the sample. As defined herein, the method further comprises the step of determining a relative position of said sample, and using said determined relative position of said sample in said milling step for positioning said sample relative to said milling beam. The relative position of said sample can be a working distance with respect to the imaging system, which can be determined by means of an autofocus procedure.

The present invention relates to a scanning electron microscope configured to scan a workpiece, such as a wafer, mask, panel, or substrate, with an electron beam to generate an image of the workpiece. The scanning electron microscope includes a deflector (17, 18) configured to deflect the electron beam to scan a target region (T) on the workpiece (W) with the electron beam, and a deflection controller (22) configured to apply to the deflectors (17, 18) a scanning voltage that causes the electron beam to scan the target region (T) and an offset voltage that shifts the electron beam from an optical axial center (O) to the target region (T).