A multi-beam electron microscope for ECCI is provided. The electron microscope has a platform, on which a crystalline sample is placed. At least a first electron source and a second electron source of the electron microscope are mounted to a housing. The housing is tiltable with respect to a longitudinal direction through a pivot for forming a fulcrum, such that the first electron source and the second electron source are tilted simultaneously and are substantially equally distanced from the platform along a vertical axis when the housing is tilted. The electron microscope also has electron beam focusing assemblies for focusing the electron beams generated by the electron sources onto the crystalline sample to generate backscattered electrons. The electron microscope also has detectors for detecting the backscattered electrons.

The system described herein relates to a particle beam apparatus for analyzing and/or for processing an object and to a method for operating a particle beam apparatus. The particle beam apparatus is designed for example as an electron beam apparatus and/or an ion beam apparatus. The particle beam apparatus comprises a beam deflection device, for example an objective lens, which is provided with a first coil and a second coil. The first coil is operated with a first coil current. The second coil is operated with a second coil current. The first coil current and/or the second coil current may always be controlled in such a way that the sum of the first coil current and the second coil current (the summation current) or the difference between the first coil current and the second coil current (the difference current) is controlled to a setpoint value.

A system for adaptive electron beam scanning may include an inspection sub-system configured to scan an electron beam across the surface of a sample. The inspection sub-system may include an electron beam source, a sample stage, a set of electron-optic elements, a detector assembly and a controller communicatively coupled to one or more portions of the inspection sub-system. The controller may assess one or more characteristics of one or more portions of an area of the sample for inspection and, responsive to the assessed one or more characteristics, adjust one or more scan parameters of the inspection sub-system.

Regarding a microscope system, a technique capable of suitably achieving a focusing on a surface of a sample is provided. The microscope system includes an irradiation optical system (laser light source 101 or the like) that irradiates a surface of a sample 3 on a stage 104 with light from an oblique direction, an observation optical system (camera 112 or the like) that forms an image of scattered light from the surface of the sample 3, a focus mechanism (piezo stage 106 or the like) that changes a height position of focus with respect to the surface of the sample 3, and a computer system 100 that acquires an image from the observation optical system. Regarding the sample 3, the computer system acquires a first image in a first focus state and a second image in a second focus state, in which the first image and the second image have different focus heights, calculates an amount of change between a position of a first spot pattern in the first image and a position of a second spot pattern in the second image, calculates an amount of change in height of the sample 3 based on an incident angle in the oblique direction and the amount of change in position of spot pattern, and adjusts the height position of the focus by using the amount of change in sample height so as to focus on the surface of the sample 3.

Regarding a microscope system, a technique capable of suitably achieving a focusing on a surface of a sample is provided. The microscope system includes an irradiation optical system (laser light source 101 or the like) that irradiates a surface of a sample 3 on a stage 104 with light from an oblique direction, an observation optical system (camera 112 or the like) that forms an image of scattered light from the surface of the sample 3, a focus mechanism (piezo stage 106 or the like) that changes a height position of focus with respect to the surface of the sample 3, and a computer system 100 that acquires an image from the observation optical system. Regarding the sample 3, the computer system acquires a first image in a first focus state and a second image in a second focus state, in which the first image and the second image have different focus heights, calculates an amount of change between a position of a first spot pattern in the first image and a position of a second spot pattern in the second image, calculates an amount of change in height of the sample 3 based on an incident angle in the oblique direction and the amount of change in position of spot pattern, and adjusts the height position of the focus by using the amount of change in sample height so as to focus on the surface of the sample 3.

Multi-beam e-beam columns and inspection systems that use such multi-beam e-beam columns are disclosed. A multi-beam e-beam column configured in accordance with the present disclosure may include an electron source and a multi-lens array configured to produce a plurality of beamlets utilizing electrons provided by the electron source. The multi-lens array may be further configured to shift a focus of at least one particular beamlet of the plurality of beamlets such that the focus of the at least one particular beamlet is different from a focus of at least one other beamlet of the plurality of beamlets.

Multi-beam e-beam columns and inspection systems that use such multi-beam e-beam columns are disclosed. A multi-beam e-beam column configured in accordance with the present disclosure may include an electron source and a multi-lens array configured to produce a plurality of beamlets utilizing electrons provided by the electron source. The multi-lens array may be further configured to shift a focus of at least one particular beamlet of the plurality of beamlets such that the focus of the at least one particular beamlet is different from a focus of at least one other beamlet of the plurality of beamlets.

The invention relates to a method for inspecting a sample with an assembly comprising a scanning electron microscope (SEM) and a light microscope (LM). The assembly comprises a sample holder for holding the sample. The sample holder is arranged for inspecting the sample with both the SEM and the LM, preferably at the same time. The method comprising the steps of: capturing a LM image of the sample in its position for imaging with the SEM; determining a position and dimensions of a region of interest in or on the sample using the LM image; determining values to which the SEM parameters need to be set to image the sample at a desired resolution; and capturing a SEM image of the region of interest, preferably using the first electron beam exposure of said region of interest.

The invention relates to a method for inspecting a sample with an assembly comprising a scanning electron microscope (SEM) and a light microscope (LM). The assembly comprises a sample holder for holding the sample. The sample holder is arranged for inspecting the sample with both the SEM and the LM, preferably at the same time. The method comprising the steps of: capturing a LM image of the sample in its position for imaging with the SEM; determining a position and dimensions of a region of interest in or on the sample using the LM image; determining values to which the SEM parameters need to be set to image the sample at a desired resolution; and capturing a SEM image of the region of interest, preferably using the first electron beam exposure of said region of interest.

Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron source 100 that emits an electron beam and an objective lens 113, a sample stage 1025 which is disposed on a stage 115 and on which a sample 114 is placed, a backscattered electron detector 1023 which is disposed between the objective lens and the sample stage and is configured to detect backscattered electrons 1017 emitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unit 138 which is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device 146. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.