In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including integrated circuit dies; measuring a position of the wafer by measuring a positions of an outer edge of the integrated circuit dies with a camera; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

An alignment system that realizes high reproducibility of position information during re-observation and in which a user can efficiently and easily re-observe an area of interest is provided. An alignment system that enables correlative observation between the imaging device 104 and the charged particle beam device 100, in which a plurality of positional alignment points are set on a sample carrier in a state where a sample is placed on the sample carrier, the alignment controller 153 obtains a transformation matrix that transforms a coordinate system of the imaging device and a coordinate system of the charged particle beam device based on position information and magnification of each of the plurality of positional alignment points when a first image is imaged by an imaging device and position information and magnification of each of a plurality of positional alignment points when observing by a charged particle beam device, and transforms a field of view designated for the first image into field-of-view information of the charged particle beam device by using the transformation matrix.

An alignment system that realizes high reproducibility of position information during re-observation and in which a user can efficiently and easily re-observe an area of interest is provided. An alignment system that enables correlative observation between the imaging device 104 and the charged particle beam device 100, in which a plurality of positional alignment points are set on a sample carrier in a state where a sample is placed on the sample carrier, the alignment controller 153 obtains a transformation matrix that transforms a coordinate system of the imaging device and a coordinate system of the charged particle beam device based on position information and magnification of each of the plurality of positional alignment points when a first image is imaged by an imaging device and position information and magnification of each of a plurality of positional alignment points when observing by a charged particle beam device, and transforms a field of view designated for the first image into field-of-view information of the charged particle beam device by using the transformation matrix.

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

Calibration systems, additive manufacturing systems employing the same, and methods of calibrating include a plurality of electron beam guns. One calibration system includes an imaging device positioned to capture one or more images of an impingement of electron beams emitted from the plurality of electron beam guns on a surface within a build chamber of the electron beam additive manufacturing system and an analysis component communicatively coupled to the imaging device. The analysis component is programmed to receive image data corresponding to the one or more images, determine one or more calibration parameters from the image data, and transmit one or more instructions to the plurality of electron beam guns in accordance with the one or more calibration parameters.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

The present invention relates to an imaging device that includes a gating element which receives incident photons and releases pulsed electrons; a single microchannel-plate (MCP) which receives the pulsed electrons and amplifies the pulsed electrons as an amplified pulsed electron flux; a collection element which receives the amplified pulsed electron flux; a high-pass filter; and a gated integrator; wherein the high-pass filter element receives the amplified pulsed electron flux from the collection element and alternate current (AC) couples the amplified pulsed electron flux as a charge pulse to the gated integrator; and wherein the gating element and the gated integrator are time-synchronized to allow charge-integration only while the AC-coupled charge pulse is unipolar. A feedback loop can provide an auto-gating function. The imaging device can be used in night vision goggles or a mass spectrometer.