A scanning electron microscope includes: an electron optical column, arranged to generate electron beams and focus the electron beams on a specimen; a first detector, arranged to receive electrons generated by the electron beams acting on the specimen; and a second detector, arranged to receive photons generated by the electron beams acting on the specimen. The second detector includes a reflector and a photon detector. The reflector is in a ring shape and is arranged to cover the perimeter of the specimen. The reflector reflects the photons generated on the specimen onto the photon detector. The scanning electron microscope provided by the present disclosure can collect photons in a wide range, and the photon detector has a high reception efficiency.

A scanning electron microscope includes: an electron optical column, arranged to generate electron beams and focus the electron beams on a specimen; a first detector, arranged to receive electrons generated by the electron beams acting on the specimen; and a second detector, arranged to receive photons generated by the electron beams acting on the specimen. The second detector includes a reflector and a photon detector. The reflector is in a ring shape and is arranged to cover the perimeter of the specimen. The reflector reflects the photons generated on the specimen onto the photon detector. The scanning electron microscope provided by the present disclosure can collect photons in a wide range, and the photon detector has a high reception efficiency.

In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, calibrating, using unbiased measurement data, the model to a specific lithography process, patterning process, or both to generate a calibrated model, using the calibrated model to predict the low-probability stochastic defect; and modifying, based on the low-probability stochastic defect, a variable, parameter, setting, or some combination of a manufacturing process of a device.

A charged particle beam device 1 includes: a plurality of detectors 7 for detecting a signal particle 9 emitted from a sample 8 irradiated with a charged particle beam 3 and converting the detected signal particle 9 into an output electrical signal 17; an energy discriminator 14 provided for each detector 7 and configured to discriminate the output electrical signal 17 according to energy of the signal particle 9; a discrimination control block 21 for setting an energy discrimination condition of each of the energy discriminators 14; and an image calculation block 22 for generating an image based on the discriminated electrical signal. The discrimination control block 21 sets energy discrimination conditions different from each other among the plurality of energy discriminators 14.

The invention relates to a method for electron microscopy. The method comprises providing an electron microscope, generating an electron beam and an image beam, adjusting one of the beam and of the beam and the image beam to reduce off-axial aberrations and correcting a diffraction pattern of the resulting modified beam. The invention also relates to a method for reducing throughput time in a sample image acquisition session in transmission electron microscopy. The method comprises providing an electron microscope, generating a beam and an image beam, adjusting one of the two to reduce off-axial aberrations and filtering the resulting modified image beam. The invention further relates to an electron microscope and to a non-transient computer-readable medium with a computer program for carrying out the methods.

The invention relates to a device and method for determining a property of a sample that is to be used in a charged particle microscope. The sample comprises a specimen embedded within a matrix layer. The device comprises a light source arranged for directing a beam of light towards said sample, and a detector arranged for detecting light emitted from said sample in response to said beam of light being incident on said sample. Finally, the device comprises a controller that is connected to said detector and arranged for determining a property of said matrix layer based on signals received by said detector.

The present disclosure is related to a Schottky thermal field (TFE) source for emitting an electron beam. Electron optics can adjust a shape of the electron beam before the electron beam impacts a scintillator screen. Thereafter, the scintillator screen generates an emission image in the form of light. An emission image can be adjusted and captured by a camera sensor in a camera at a desired magnification to create a final image of the Schottky TFE source's tip. The final image can be displayed and analyzed to for defects.

A GUI (graphical user interface) image includes an input portion and a reference image. The reference image includes a plan diagram and numerical value information. The plan diagram includes a figure indicating an electron penetration range, a figure indicating a characteristic X-ray generation range, and a figure indicating a back-scattered electron generation range. The numerical value information includes numerical values indicating sizes of these ranges.

A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/BSE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.

A method of operating a particle beam device for imaging, analyzing and/or processing an object may be carried out, for example, by a particle beam device. The method may include: identifying at least one region of interest on the object; defining: (i) an analyzing sequence for analyzing the object, (ii) a processing sequence for processing the object by deformation and (iii) an adapting sequence for adapting the at least one region of interest depending on the processing sequence and/or on the analyzing sequence; processing the object by deformation according to the processing sequence and/or analyzing the object according to the analyzing sequence; adapting the at least one region of interest according to the adapting sequence; and after or while adapting the at least one region of interest, imaging and/or analyzing the at least one region of interest using a primary particle beam being generated by a particle beam generator.