A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.

A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.

An apparatus for analyzing and/or processing a sample with a particle beam, comprising: a providing unit for providing the particle beam; a shielding element for shielding an electric field (E) generated by charges (Q) accumulated on the sample, wherein the shielding element has a through opening for the particle beam to pass through towards the sample; a detecting unit configured to detect an actual position of the shielding element; and an adjusting unit for adjusting the shielding element from the actual position into a target position.

An apparatus for analyzing and/or processing a sample with a particle beam, comprising: a providing unit for providing the particle beam; a shielding element for shielding an electric field (E) generated by charges (Q) accumulated on the sample, wherein the shielding element has a through opening for the particle beam to pass through towards the sample; a detecting unit configured to detect an actual position of the shielding element; and an adjusting unit for adjusting the shielding element from the actual position into a target position.

Provided is an electron microscope for generating an observation image of a sample by using an electron beam in order to obtain a scanning electron microscope image by low angle backscattered electrons, which are backscattered electrons emitted at a low angle with respect to a sample surface, even for an electron microscope including an objective lens that leaks a magnetic field to a sample. The electron microscope includes: an electron source configured to irradiate the sample with the electron beam; an objective lens configured to focus the electron beam by a leakage magnetic field which is a magnetic field leaked toward the sample; a detector configured to detect a third electron which is an electron emitted when a low angle backscattered electron is caused to collide with the sample by the leakage magnetic field, the low angle backscattered electron being a backscattered electron emitted at a low angle with respect to a surface of the sample; and a compensation electrode or a compensation magnetic pole provided between the sample and the detector and configured to control a trajectory of the third electron.

Provided is an electron microscope for generating an observation image of a sample by using an electron beam in order to obtain a scanning electron microscope image by low angle backscattered electrons, which are backscattered electrons emitted at a low angle with respect to a sample surface, even for an electron microscope including an objective lens that leaks a magnetic field to a sample. The electron microscope includes: an electron source configured to irradiate the sample with the electron beam; an objective lens configured to focus the electron beam by a leakage magnetic field which is a magnetic field leaked toward the sample; a detector configured to detect a third electron which is an electron emitted when a low angle backscattered electron is caused to collide with the sample by the leakage magnetic field, the low angle backscattered electron being a backscattered electron emitted at a low angle with respect to a surface of the sample; and a compensation electrode or a compensation magnetic pole provided between the sample and the detector and configured to control a trajectory of the third electron.

The invention relates to a sample holder for a microscopy system comprising a material with a low thermal conductivity for reducing a drift of the sample holder when inserted into a microscope. The invention also relates to a cold trap for a microscopy system comprising a sample holder, wherein the cold trap comprises a coating with a high thermal emissivity to increase a heat load between the sample holder and the cold trap. The invention also relates to a microscopy system comprising a first element configured to have a first temperature, a second element configured to have a second temperature, and a third element configured to have a third temperature, wherein the third element is configured to be located at a plurality of different distances from the first element, wherein the microscopy system is configured to image a sample and to reduce a drift of the image.

A detector for use in a charged particle device for an assessment tool to detect signal particles from a sample, the detector including a substrate, the substrate including: a semiconductor element configured to detect signal particles above a first energy threshold; and a charge-based element configured to detect signal particles below a second energy threshold.

A detector for use in a charged particle device for an assessment tool to detect signal particles from a sample, the detector including a substrate, the substrate including: a semiconductor element configured to detect signal particles above a first energy threshold; and a charge-based element configured to detect signal particles below a second energy threshold.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a third deflector located between the second deflector and the objective lens assembly and disposed in an opening delimited and circumscribed by the pole piece, and each of the first deflector, the second deflector and the third deflector is an electrostatic deflector.