Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a negative jump voltage to an electrode of a process chamber to set a wafer voltage for a wafer, modulating an amplitude of the wafer voltage to produce a train of groups of pulse bursts with different amplitudes, and repeating the modulating of the amplitude of the wafer voltage to repeat the train of the groups of pulse bursts to create an ion energy distribution function having more than one energy peak. In some embodiments, the negative jump voltage can include a single-cycle voltage waveform with a voltage ramp during an ion-current phase, in which the voltage ramp can be positive or negative and a duration of the ion-current phase can comprise more or less than fifty percent of a period of the waveform.

This DC high-voltage source device comprises a first voltage source including: a first variable DC voltage source; a second variable DC voltage source; a first switching circuit that generates an AC voltage from the DC voltage of the first variable DC voltage source; a second switching circuit that generates an AC voltage from the DC voltage of the second variable DC voltage source; a first transformer that transforms the AC voltage generated by the first switching circuit; a second transformer that transforms the AC voltage generated by the second switching circuit; a DC high-voltage generation circuit that generates a DC high voltage on the basis of a transformed AC voltage supplied from the first transformer and a transformed AC voltage supplied from the second transformer; and a computer system. The computer system independently adjusts the DC voltage value of the first variable DC voltage source, the DC voltage value of the second variable DC voltage source, the switching timing of the first switching circuit, and the switching timing of the second switching circuit.

This DC high-voltage source device comprises a first voltage source including: a first variable DC voltage source; a second variable DC voltage source; a first switching circuit that generates an AC voltage from the DC voltage of the first variable DC voltage source; a second switching circuit that generates an AC voltage from the DC voltage of the second variable DC voltage source; a first transformer that transforms the AC voltage generated by the first switching circuit; a second transformer that transforms the AC voltage generated by the second switching circuit; a DC high-voltage generation circuit that generates a DC high voltage on the basis of a transformed AC voltage supplied from the first transformer and a transformed AC voltage supplied from the second transformer; and a computer system. The computer system independently adjusts the DC voltage value of the first variable DC voltage source, the DC voltage value of the second variable DC voltage source, the switching timing of the first switching circuit, and the switching timing of the second switching circuit.

A feedthrough for providing an electrical connection is provided. The feedthrough comprises a conductor and a quartz or a glass structure configured to surround at least a portion of the conductor and provide isolation to the conductor. The conductor and the quartz or glass structure may be coaxially arranged. The feedthrough can provide an electrical connection between an inside and outside of a vacuum chamber that contains a sample.

A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

A plasma etching apparatus includes a processing vessel, a stage, a gas supply, a first high frequency power supply, a second high frequency power supply and a control device. The stage is provided and configured to place thereon a substrate. The gas supply is configured to supply a processing gas. The first high frequency power supply is configured to supply a first high frequency power. The second high frequency power supply is configured to supply a second high frequency power to the stage. The control device controls a supply and a stop of the supply of each of the first and the second high frequency powers at every preset cycle. The first and the second high frequency powers are supplied exclusively. A ratio of a supply time with respect to a single cycle of the first high frequency power is lower than that of the second high frequency power.

Provided are a charged particle beam generator and a charged particle beam device that can improve insulation reliability as a result of reducing the high electric field generated around a connection section for a conductor. The charged particle beam generator 100 has: a plug 151 that guides high voltage from outside to a charged particle source that is in a vacuum; and a socket 251 having the charged particle source attached thereto. An electric field reduction ring 161 that electrically connects to one of a plurality of conductors that guide high voltage is embedded inside the tip of the plug 151. The plurality of conductors that guide the high voltage are arranged so as to penetrate the electric field reduction ring 161.

Provided are a charged particle beam generator and a charged particle beam device that can improve insulation reliability as a result of reducing the high electric field generated around a connection section for a conductor. The charged particle beam generator 100 has: a plug 151 that guides high voltage from outside to a charged particle source that is in a vacuum; and a socket 251 having the charged particle source attached thereto. An electric field reduction ring 161 that electrically connects to one of a plurality of conductors that guide high voltage is embedded inside the tip of the plug 151. The plurality of conductors that guide the high voltage are arranged so as to penetrate the electric field reduction ring 161.

Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.