An electron microscope includes: a sample holder; a first optical system irradiating and scanning the sample; an electron detection unit detecting secondary electrons discharged from the sample; a first vacuum chamber which holds the sample holder, the first optical system, and the electron detection unit in a vacuum atmosphere; a display unit displaying a microscopic image of the sample; and a control unit which controls the sample holder and the operation of the first optical system. The electron microscope includes a second vacuum chamber different from the first vacuum chamber, and a second optical system in the second vacuum chamber and is different from the first optical system. The second optical system and the control unit are capable of mutual communication, and the second vacuum chamber has a state changing means which changes the state of the sample.

The disclosure relates to a sample holder for a charged particle microscope, comprising a holder body with a recess for releasably receiving a sample carrier with a sample therein; and at least one fixing element that is connectable to said holder body for fixing said sample carrier in said recess of said holder body. As described herein, said fixing element comprises a clamping member that is movably connected to said holder body, wherein said clamping member is movable between a closed and an open position, wherein in the open position said sample carrier can be placed in said recess, and wherein in said closed position said sample carrier can be locked in said recess. With this, a more reliable mounting of a sample carrier onto the sample holder can be established.

An electron detector comprises a sensor module comprising a sensor for detecting electrons, and an electronics module comprising circuitry for processing signals received from the sensor module. Wiring is provided for electrically connecting the sensor module to the electronics module. An adaptor is arranged between the sensor module and the electronics module. The adaptor comprises a passage for the wiring, and shielding elements for shielding from radiation.

A method for preparing a sample for transmission electron microscopy (TEM) comprises providing a substrate having a patterned area on its surface that is defined by a particular topography. A conformal layer of contrasting material is deposited on the topography by depositing a layer of the contrasting material on a local target area of the substrate, spaced apart from the patterned area via Electron Beam Induced Deposition (EBID). The deposition parameters, the thickness of the layer deposited in the target area, and the distance of the target area to the patterned area are selected so that a conformal layer of the contrasting material is formed on the topography of the patterned area. A protective layer is subsequently deposited. The protective layer does not damage the topography in the patterned area because the patterned area is protected by the conformal layer.

Situating samples on an optical axis of a charged particle microscope can be performed based a 3D map of the samples. The 3D map is produced with back-side illumination of the samples and telecentric imaging to produce profile images. The profile images are a combined to form the 3D map. Using the 3D map, the processor is coupled to a sample stage to situate a selected sample or sample portion for imaging in the charged particle microscope. In some examples, the processor is responsive to selection of a sample using a graphical interface so that the sample stage is controlled to safely situate the selected sample without further operator intervention.

An electron microscopy grid, includes: (i) a perforated substrate, (ii) a support film on the perforated substrate, the support film having a thickness of 60 Å or less, and (iii) linkers attached on top of the support film. The linkers has at least one affinity group for immobilizing an analyte; wherein the linkers form a non-random pattern on the support film.

A grid sample production apparatus includes: a frame in which an internal space is formed; a grid unit which is vertically provided on an upper side of the frame, and grips a grid at a lower end; a filter unit which is provided to be movable inside the frame and selectively absorbs the protein liquid of the grid gripped at one end of the grid unit; a laser unit which is provided on one side of the filter unit; a screen unit which is disposed inside the frame and on which a diffraction image appears by the laser from the laser unit by being diffracted by the grid; and a liquid amount analysis unit which analyzes an illuminance of the diffraction image appeared on the screen unit and determines whether the protein liquid of the grid is disposed in an appropriate amount.

A TEM electromechanical in-situ testing method of one-dimensional materials is provided. A multi-function sample stage which can compress, buckle and bend samples is designed and manufactured. A carbon film on a TEM grid of Cu is eliminated, and the TEM grid of Cu is cut in half through the center of the circle. The samples are dispersed ultrasonically in alcohol and dropped on the edge of the semicircular grid of Cu with a pipette. A single sample is fixed on the edge of a substrate of the sample stage with conductive silver epoxy by using a micromechanical device under an optical microscope, and conductive silver paint is applied to the surface of the substrate of the sample stage; and an electromechanical in-situ testing is conducted in a TEM. This provides a simple and efficient sample preparation and testing method for a TEM electromechanical in-situ observing experiment.

The present application discloses a method for preparing a TEM sample, including the following steps: step 1: providing a thin-film pre-sample with undesirable voids; step 2: performing a first cutting with a first FIB to form the TEM sample located in the target region of the thin-film pre-sample. The first thickness is reached after the first cutting. The voids are exposed from the front surface or the back surface of the TEM sample after the first cutting; step 3: depositing a first material layer by an ALD process to fill the voids in the TEM sample; step 4: performing the second cutting with a second FIB to form the target thickness of the TEM sample in the target region of the thin-film pre-sample. The present application can reduce or eliminate ion beam cutting marks related to the voids in the thin-film pre-sample.

Disclosed herein is a method comprising depositing a first amount of electric charges into a region of a sample, during a first time period; depositing a second amount of electric charges into the region, during a second time period; while scanning a probe spot generated on the sample by a beam of charged particles, recording from the probe spot signals representing interactions of the beam of charged particles and the sample; wherein an average rale of deposition during the first time period, and an average rate of deposition during the second time period are different.