A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

Apparatus and methods for adjusting beam condition of charged particles are disclosed. According to certain embodiments, the apparatus includes one or more first multipole lenses displaced above an aperture, the one or more first multipole lenses being configured to adjust a beam current of a charged-particle beam passing through the aperture. The apparatus also includes one or more second multipole lenses displaced below the aperture, the one or more second multipole lenses being configured to adjust at least one of a spot size and a spot shape of the beam.

A method and device for characterizing microbial carbonate pores, and a server. Acquiring a user's detailed observational description of a profile of a microbial carbonate to be analyzed, and determining a full-diameter core sample on the microbial carbonate; performing pore characterization and a first pore test on the full-diameter core sample to determine a centimeter-scale pore parameter; determining a sampling position on the full-diameter core sample, and sampling on the full-diameter core sample to obtain a plunger sample; performing a second pore test on the plunger sample to determine a millimeter-scale pore parameter; determining a sampling position on the plunger sample according to the millimeter-scale pore parameter, and sampling on the plunger sample to obtain a scanning electron microscope (SEM) sample and a casting thin section sample; and performing a pore test on the SEM sample and the casting thin section sample to determine a micron-to-nanoscale pore parameter.

A method and device for characterizing microbial carbonate pores, and a server. Acquiring a user's detailed observational description of a profile of a microbial carbonate to be analyzed, and determining a full-diameter core sample on the microbial carbonate; performing pore characterization and a first pore test on the full-diameter core sample to determine a centimeter-scale pore parameter; determining a sampling position on the full-diameter core sample, and sampling on the full-diameter core sample to obtain a plunger sample; performing a second pore test on the plunger sample to determine a millimeter-scale pore parameter; determining a sampling position on the plunger sample according to the millimeter-scale pore parameter, and sampling on the plunger sample to obtain a scanning electron microscope (SEM) sample and a casting thin section sample; and performing a pore test on the SEM sample and the casting thin section sample to determine a micron-to-nanoscale pore parameter.

Methods and apparatuses are disclosed herein for parameter estimation for metrology. An example method at least includes optimizing, using a parameter estimation network, a parameter set to fit a feature in an image based on one or more models of the feature, the parameter set defining the one or more models, and providing metrology data of the feature in the image based on the optimized parameter set.

Methods and apparatuses are disclosed herein for parameter estimation for metrology. An example method at least includes optimizing, using a parameter estimation network, a parameter set to fit a feature in an image based on one or more models of the feature, the parameter set defining the one or more models, and providing metrology data of the feature in the image based on the optimized parameter set.

A light modulated electron source utilizes a photon-beam source to modulate the emission current of an electron beam emitted from a silicon-based field emitter. The field emitter's cathode includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating layer. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon-beam source generates a photon beam including photons having an energy greater than the bandgap of silicon, and includes optics that direct the photon beam onto the emission tip, whereby each absorbed photon creates a photo-electron that combines with the free electrons to enhance the electron beam's emission current. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.